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    GMR sensor having layers treated with nitrogen for increased magnetoresistance
    1.
    发明授权
    GMR sensor having layers treated with nitrogen for increased magnetoresistance 有权
    GMR传感器具有用氮处理的层以增加磁阻

    公开(公告)号：US07251110B2

    公开(公告)日：2007-07-31

    申请号：US11039085

    申请日：2005-01-18

    申请人： Wen-yaung Lee ,  Thomas E. Shatz ,  Dulip Ajantha Welipitiya ,  Brian R. York

    发明人： Wen-yaung Lee ,  Thomas E. Shatz ,  Dulip Ajantha Welipitiya ,  Brian R. York

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.

    摘要翻译： 一种磁阻传感器，其具有已经用氮气（氮化）处理并且在沉积期间具有氮原位加入的Ta盖层的衬底。 氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。 沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。 沉积在氧化铝基体上的氮的量足以构成氮层，但影响氧化铝的结构，使氧化铝具有所需的结晶结构和非常光滑的表面。 盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。

    GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
    3.
    发明授权
    GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance 失效
    GMR传感器具有用氮气处理的底层以提高磁阻

    公开(公告)号：US07333302B2

    公开(公告)日：2008-02-19

    申请号：US11769519

    申请日：2007-06-27

    申请人： Wen-yaung Lee ,  Thomas E. Shatz ,  Dulip Ajantha Welipitiya ,  Brian R. York

    发明人： Wen-yaung Lee ,  Thomas E. Shatz ,  Dulip Ajantha Welipitiya ,  Brian R. York

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.

    摘要翻译： 具有已经用氮气（氮化）处理的衬底的磁阻传感器。 氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。 沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。 沉积在氧化铝基体顶部的氮的量不足以构成氮层，但是影响氧化铝的结构以使氧化铝具有所需的晶体结构和非常光滑的表面。