公开(公告)号：US10566015B2

公开(公告)日：2020-02-18

申请号：US15976606

申请日：2018-05-10

Applicant: Western Digital Technologies, Inc.

Inventor： James Mac Freitag ,  Zheng Gao ,  Masahiko Hashimoto ,  Sangmun Oh ,  Hua Al Zeng

IPC: G11B5/127 ,  G11B5/39 ,  G11C11/16 ,  G11B5/17 ,  G11B5/60 ,  G11B5/31 ,  G11B5/35 ,  G11B5/00

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.