公开(公告)号：US20240240994A1

公开(公告)日：2024-07-18

申请号：US18355102

申请日：2023-07-19

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01K7/36 ,  G11B5/39

CPC classification number: G01K7/36 ,  G11B5/3906 ,  G11B2005/0021

Abstract: The present disclosure generally relates to temperature detection devices, comprising an antiferromagnetic (AFM) layer a ferromagnetic (FM) layer disposed on the AFM layer and a spin-orbit torque (SOT) material layer disposed on the FM layer. The SOT material layer may comprise: a SOT material portion; a SOT material portion and an insulating material portion; or a plurality of SOT material portions and a plurality of insulating material portions. The temperature detection devices may also have a second FM layer disposed on the SOT material layer. The temperature detection devices may also have a second AFM layer disposed on the second FM layer. In another embodiment, the temperature detection devices may also have a heat sink.

公开(公告)号：US20240310459A1

公开(公告)日：2024-09-19

申请号：US18350584

申请日：2023-07-11

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01R33/07 ,  G01R33/00 ,  G01R33/09

CPC classification number: G01R33/075 ,  G01R33/0052 ,  G01R33/093

Abstract: The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

公开(公告)号：US20230306993A1

公开(公告)日：2023-09-28

申请号：US17705147

申请日：2022-03-25

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Brian R. YORK ,  Xiaoyong LIU ,  Son T. LE ,  Cherngye HWANG ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Kuok San HO ,  Hisashi TAKANO ,  Julian SASAKI ,  Huy H. HO ,  Khang H. D. NGUYEN ,  Nam Hai PHAM

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G11B2005/3996 ,  G11B2005/0021

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.