公开(公告)号：US6159829A

公开(公告)日：2000-12-12

申请号：US64488

申请日：1998-04-22

申请人： William L. Warren ,  Karel J. R. Vanheusden ,  Daniel M. Fleetwood ,  Roderick A. B. Devine ,  Leo B. Archer ,  George A. Brown ,  Robert M. Wallace

发明人： William L. Warren ,  Karel J. R. Vanheusden ,  Daniel M. Fleetwood ,  Roderick A. B. Devine ,  Leo B. Archer ,  George A. Brown ,  Robert M. Wallace

IPC分类号： G11C13/04 ,  G11C16/04 ,  H01L21/28 ,  H01L29/792 ,  H01L21/425

CPC分类号： H01L21/263 ,  G11C13/04 ,  G11C16/0466 ,  H01L21/28176 ,  H01L21/28273 ,  H01L29/792

摘要： An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

摘要翻译： 利用电介质层内的质子运动的电子写入的存储元件的增强，该电介质层被任一侧上的层围绕，以将质子限制在电介质层内，电极装置连接到周围层，以改变电介质内的质子的空间位置 层。 该装置优选构造为硅 - 二氧化硅 - 硅层状结构，其中质子在包含氢气的气氛中退火时被引入该结构。 通过以突然的冷却结束该退火步骤来增强器件操作。 该器件以低功率工作，优选是非易失性的，具有耐辐射性，并且与常规的硅MOS处理兼容，用于与同一硅衬底上的其它微电子元件集成。