公开(公告)号：US20240265964A1

公开(公告)日：2024-08-08

申请号：US18429450

申请日：2024-02-01

Applicant: Winbond Electronics Corp.

Inventor： Masaru Yano ,  Masato Ono ,  Takehiro Kaminaga

IPC: G11C11/56

CPC classification number: G11C11/56

Abstract: A flash memory that improves the reliability of data stored in a memory cell array is provided in the disclosure. A wear leveling method of the flash memory of the disclosure includes the following operation. The memory cell array includes multiple sectors, the method includes the following operation. A region is set for storing a first flag and a second flag in each sector of multiple sectors of the memory cell array. The first flag indicates whether bit correction has occurred, and the second flag indicates whether specific data is stored. The second flag of a source sector among the sectors in which the specific data is stored is set. The specific data is written to a new sector among the sectors in which the first flag is in a reset state, and the second flag of the new sector is set.