Fusible link in an integrated semiconductor circuit and a memory cell of a semiconductor component
    1.
    发明授权
    Fusible link in an integrated semiconductor circuit and a memory cell of a semiconductor component 有权
    集成半导体电路中的可熔连接和半导体部件的存储单元

    公开(公告)号:US06303980B1

    公开(公告)日:2001-10-16

    申请号:US09549276

    申请日:2000-04-14

    IPC分类号: H01L2702

    摘要: A fusible link in an integrated semiconductor circuit and a process for producing the fusible link contemplate the disposition of a fusible link, which is constructed with a cross-sectional constriction as a desired fusing point for its conductor track, in a void. A surface of the void and/or a bare conductor track can be covered with a protection layer, to prevent corrosion. The advantages of such a fusible link are a lower ignition energy and increased reliability. The fusible link may be used as a memory element of a PROM.

    摘要翻译: 集成半导体电路中的可熔链路和用于制造可熔连接的工艺的过程考虑到在空隙中构造有作为其导体轨迹的期望的熔合点的横截面收缩的可熔连接件的布置。 空隙和/或裸导体轨道的表面可以用保护层覆盖,以防止腐蚀。 这种可熔连接件的优点是较低的点火能量和更高的可靠性。 可熔链路可以用作PROM的存储元件。