公开(公告)号：US20090307163A1

公开(公告)日：2009-12-10

申请号：US12354356

申请日：2009-01-15

申请人： Won-Hyouk JANG ,  Joo-Hwa Lee ,  Dong-Hyun Kim ,  Hyo-Jin Han ,  Kil-Ho Ok ,  Sung-Hoon Kim

发明人： Won-Hyouk JANG ,  Joo-Hwa Lee ,  Dong-Hyun Kim ,  Hyo-Jin Han ,  Kil-Ho Ok ,  Sung-Hoon Kim

IPC分类号： G06F15/18 ,  H01L21/66 ,  G01B21/08 ,  G06N5/02 ,  G06F17/10

CPC分类号： G01B11/0641 ,  G01B11/0683 ,  H01L22/12 ,  H01L22/20

摘要： A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

摘要翻译： 公开了一种用于测量沉积在衬底上的非晶硅的沉积厚度的虚拟测量装置和方法，其中测量非晶硅的沉积厚度的方法包括预测和适应操作。 在预测操作中，在将非晶硅沉积到衬底的过程中，通过使用表示沉积速度和多个工艺因素之间的关系的预测模型将预测的沉积速度乘以沉积时间来预测沉积厚度 与从沉积厚度和沉积时间获得的沉积速度相关联，并将预测的沉积厚度与测量的沉积厚度进行比较，使得多个工艺因素之间的关系和预测模型中的沉积速度被补偿 根据比较差异。