Abstract:
A method of performing surface profilometry includes receiving one or more polarization raw frames of a printed layer of a physical object undergoing additive manufacturing, the one or more polarization raw frames being captured at different polarizations by one or more polarization cameras, extracting one or more polarization feature maps in one or more polarization representation spaces from the one or more polarization raw frames, obtaining a coarse layer depth map of the printed layer, generating one or more surface-normal images based on the coarse layer depth map and the one or more polarization feature maps, and generating a 3D reconstruction of the printed layer based on the one or more surface-normal images.
Abstract:
A multi-modal sensor system includes: an underlying sensor system; a polarization camera system configured to capture polarization raw frames corresponding to a plurality of different polarization states; and a processing system including a processor and memory, the processing system being configured to control the underlying sensor system and the polarization camera system, the memory storing instructions that, when executed by the processor, cause the processor to: control the underlying sensor system to perform sensing on a scene and the polarization camera system to capture a plurality of polarization raw frames of the scene; extract first tensors in polarization representation spaces based on the plurality of polarization raw frames; and compute a characterization output based on an output of the underlying sensor system and the first tensors in polarization representation spaces.
Abstract:
Methods and systems for performing optical measurements of geometric structures filled with an adsorbate by a gaseous adsorption process are presented herein. Measurements are performed while the metrology target under measurement is treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material adsorbs onto the structures under measurement and fills openings in the structural features, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In one aspect, measurement data is collected when a structure is unfilled and when the structure is filled by gaseous adsorption. The collected data is combined in a multi-target model based measurement to reduce parameter correlations and improve measurement performance.
Abstract:
A device for measuring a large-area and massive scattered field in nanoscale. The device includes a polarization state generator disposed on an output optical path of a laser source, a polarization state analyzer operating to demodulate a polarized light beam emitted thereon, a first objective lens and a first lens disposed on an optical path of a sample stage, and a scanning mirror disposed on an optical path in front of or at the rear of the polarization state generator.
Abstract:
A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.
Abstract:
Embodiments include automatic selection of sample values for optical metrology. An embodiment of a method includes providing a library parameter space for modeling of a diffracting structure using an optical metrology system; automatically determining by a processing unit a reduced sampling set from the library parameter space, wherein the reduced space is based on one or both of the following recommending a sampling shape based on an expected sample space usage, or recommending a sampling filter based on correlation between two or more parameters of the library parameter space; and generating a library for the optical metrology system using the reduced sampling set.
Abstract:
Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.
Abstract:
An electronic component thickness measurement method includes extracting, from a plurality of second reference lines in first image data and a plurality of second reference lines in second image data, only a second reference line at which a difference in intensity peak between respective second reference lines at a same position in the first image data and the second image data is smallest, and forming third image data including a first reference line and the extracted second reference line, and calculating a thickness of the electronic component from a distance between the first reference line and the second reference line in the third image data.
Abstract:
Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE.
Abstract:
A local purging tool for purging a portion of a surface of a wafer with purging gas is disclosed. The purging tool includes a purging chamber configured to contain purging gas within a cavity of the purging chamber, a permeable portion of a surface of the purging chamber configured to diffuse purging gas from the cavity of the chamber to a portion of a surface of a wafer, and an aperture configured to transmit illumination received from an illumination source to a measurement location of the portion of the surface of the wafer and further configured to transmit illumination reflected from the measurement location to a detector.