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公开(公告)号：US20120138932A1
公开(公告)日：2012-06-07
申请号：US13089298
申请日：2011-04-18
申请人： Wu-Hsiung Lin , Po-Hsueh Chen , Shin-Shueh Chen , Guang-Ren Shen , Jia-Hong Ye
发明人： Wu-Hsiung Lin , Po-Hsueh Chen , Shin-Shueh Chen , Guang-Ren Shen , Jia-Hong Ye
IPC分类号： H01L29/04
CPC分类号： H01L27/1255 , G02F1/136213 , G02F2201/40 , G02F2202/10 , G02F2203/01 , H01L27/1225 , H01L29/41733 , H01L29/7869
摘要： A pixel structure and a manufacturing method thereof are provided. In the pixel structure, an electrode of a storage capacitor is formed when an active layer is formed, and the electrode and the active layer are made of the same material. The material of the electrode and the active layer can be an oxide semiconductor with high transmittance. Therefore, a stable display frame of the pixel structure can be provided by the storage capacitor, an aperture ratio of the pixel structure can be improved, and power consumption can be further reduced.
摘要翻译： 提供像素结构及其制造方法。 在像素结构中，当形成有源层时形成存储电容器的电极，并且电极和有源层由相同的材料制成。 电极和有源层的材料可以是具有高透射率的氧化物半导体。 因此，可以通过存储电容器提供像素结构的稳定的显示框，可以提高像素结构的开口率，并且能够进一步降低功耗。
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公开(公告)号：US08604477B2
公开(公告)日：2013-12-10
申请号：US13089298
申请日：2011-04-18
申请人： Wu-Hsiung Lin , Po-Hsueh Chen , Shin-Shueh Chen , Guang-Ren Shen , Jia-Hong Ye
发明人： Wu-Hsiung Lin , Po-Hsueh Chen , Shin-Shueh Chen , Guang-Ren Shen , Jia-Hong Ye
CPC分类号： H01L27/1255 , G02F1/136213 , G02F2201/40 , G02F2202/10 , G02F2203/01 , H01L27/1225 , H01L29/41733 , H01L29/7869
摘要： A pixel structure and a manufacturing method thereof are provided. In the pixel structure, an electrode of a storage capacitor is formed when an active layer is formed, and the electrode and the active layer are made of the same material. The material of the electrode and the active layer can be an oxide semiconductor with high transmittance. Therefore, a stable display frame of the pixel structure can be provided by the storage capacitor, an aperture ratio of the pixel structure can be improved, and power consumption can be further reduced.
摘要翻译： 提供像素结构及其制造方法。 在像素结构中，当形成有源层时形成存储电容器的电极，并且电极和有源层由相同的材料制成。 电极和有源层的材料可以是具有高透射率的氧化物半导体。 因此，可以通过存储电容器提供像素结构的稳定的显示框，可以提高像素结构的开口率，并且能够进一步降低功耗。
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公开(公告)号：US08674350B2
公开(公告)日：2014-03-18
申请号：US13284961
申请日：2011-10-30
申请人： Chung-Tao Chen , Wu-Hsiung Lin , Po-Hsueh Chen
发明人： Chung-Tao Chen , Wu-Hsiung Lin , Po-Hsueh Chen
IPC分类号： H01L29/10
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.
摘要翻译： 薄膜晶体管（TFT）包括栅电极，栅极绝缘层，第一保护图案，第二保护图案，源电极，漏电极，半导体沟道层和钝化层。 第一保护图案和第二保护图案设置在栅极电极上方的栅极绝缘层上。 源电极设置在栅绝缘层和第一保护图案上。 漏电极设置在栅绝缘层和第二保护图案上。 半导体沟道层设置在栅绝缘层，源电极和漏电极上。 在从源电极到漏电极的延伸方向上，第一保护图案的长度短于源电极的长度，并且第二保护图案的长度短于漏电极的长度。
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公开(公告)号：US20130049002A1
公开(公告)日：2013-02-28
申请号：US13284961
申请日：2011-10-30
申请人： Chung-Tao Chen , Wu-Hsiung Lin , Po-Hsueh Chen
发明人： Chung-Tao Chen , Wu-Hsiung Lin , Po-Hsueh Chen
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.
摘要翻译： 薄膜晶体管（TFT）包括栅电极，栅极绝缘层，第一保护图案，第二保护图案，源电极，漏电极，半导体沟道层和钝化层。 第一保护图案和第二保护图案设置在栅极电极上方的栅极绝缘层上。 源电极设置在栅绝缘层和第一保护图案上。 漏电极设置在栅绝缘层和第二保护图案上。 半导体沟道层设置在栅绝缘层，源电极和漏电极上。 在从源电极到漏电极的延伸方向上，第一保护图案的长度短于源电极的长度，并且第二保护图案的长度短于漏电极的长度。
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