公开(公告)号：US20140264740A1

公开(公告)日：2014-09-18

申请号：US13833684

申请日：2013-03-15

申请人： X-FAB SEMICONDUCTOR FOUNDRIES AG

发明人： Paul Ronald Stribley

IPC分类号： H01L49/02

CPC分类号： H01L27/0805 ,  H01L28/60

摘要： A semiconductor device comprising: a first, a second and a third conductive layer; the second conductive layer being located between the first and third conductive layers; wherein respective regions of the first and second conductive layers form a first capacitor; and respective regions of the second and third conductive layers form a second capacitor.

摘要翻译： 一种半导体器件，包括：第一，第二和第三导电层; 所述第二导电层位于所述第一和第三导电层之间; 其中所述第一和第二导电层的各个区域形成第一电容器; 并且第二和第三导电层的各个区域形成第二电容器。

公开(公告)号：US09524963B2

公开(公告)日：2016-12-20

申请号：US13833684

申请日：2013-03-15

申请人： X-FAB Semiconductor Foundries AG

发明人： Paul Ronald Stribley

IPC分类号： H01L23/52 ,  H01L27/08 ,  H01L29/24 ,  H01L49/02

CPC分类号： H01L27/0805 ,  H01L28/60

摘要： A semiconductor device comprising: a first, a second and a third conductive layer; the second conductive layer being located between the first and third conductive layers; wherein respective regions of the first and second conductive layers form a first capacitor; and respective regions of the second and third conductive layers form a second capacitor.