公开(公告)号：US10211367B2

公开(公告)日：2019-02-19

申请号：US15607461

申请日：2017-05-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chia-hung Chang ,  Gong Chen ,  Su-hui Lin ,  Kang-wei Peng ,  Sheng-hsien Hsu ,  Chuan-gui Liu ,  Xiao-xiong Lin ,  Yu Zhou ,  Jing-jing Wei ,  Jing Huang

IPC: H01L33/00 ,  H01L33/02 ,  H01L27/15 ,  H01L33/10 ,  H01L33/60 ,  H01L33/20

Abstract: An LED fabrication method includes forming release holes by focusing a laser at the substrate back surface, and forming stealth laser-blast areas by focusing a laser inside the substrate on positions corresponding to the release holes; communicating the release holes with the stealth laser-blast areas to release impurities generated during forming of the stealth laser-blast areas from the substrate through the release holes, thereby avoiding low external quantum efficiency resulting from adherence of the released material to the side wall of the stealth laser-blast areas. By focusing on a position with 10 μm˜40 μm inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.