公开(公告)号：US20180128757A1

公开(公告)日：2018-05-10

申请号：US15574174

申请日：2016-05-29

申请人： XWINSYS LTD.

发明人： DORON REINIS ,  Michael GEFFEN ,  Roni PERETZ ,  Colin SMITH

IPC分类号： G01N23/223 ,  G02B21/00 ,  G01N23/2206

摘要： The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.