公开(公告)号：US20210083145A1

公开(公告)日：2021-03-18

申请号：US17105294

申请日：2020-11-25

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd

Inventor： Feng WANG ,  Gong CHEN ,  Hongwei XIA ,  Yu ZHAN ,  Ling-Yuan HONG ,  Su-Hui LIN ,  Kang-Wei PENG ,  Chia-Hung CHANG

IPC: H01L33/22 ,  H01L33/14

Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.