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公开(公告)号：US20170324002A1
公开(公告)日：2017-11-09
申请号：US15658375
申请日：2017-07-24
Inventor： Jiansen ZHENG , Su-Hui LIN , Chen-Ke HSU , Chih-Wei CHAO
CPC classification number: H01L33/24 , H01L33/14 , H01L33/145 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0033
Abstract: A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.
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公开(公告)号：US20210083145A1
公开(公告)日：2021-03-18
申请号：US17105294
申请日：2020-11-25
Inventor： Feng WANG , Gong CHEN , Hongwei XIA , Yu ZHAN , Ling-Yuan HONG , Su-Hui LIN , Kang-Wei PENG , Chia-Hung CHANG
Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.
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公开(公告)号：US20170025575A1
公开(公告)日：2017-01-26
申请号：US15186487
申请日：2016-06-19
Inventor： Jiansen ZHENG , Su-Hui LIN , Chen-Ke HSU , Chih-Wei CHAO
CPC classification number: H01L33/24 , H01L33/14 , H01L33/145 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0033
Abstract: A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serves as current blocking layer; a current spreading layer covering the surface of the light transmission layer and the surface of an epitaxial layer of a non-mask light transmission layer. As the refractive index of the light transmission layer is between those of the epitaxial layer and the hole, indicating a difference of refractive index between the light transmission layer and the epitaxial layer, the probability of scattering generated when light from a luminescent layer emits upwards can be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.
Abstract translation: 发光二极管芯片包括具有多个凹部的外延层和顶层上的突出部分; 光透射层，位于相邻突出部分的顶端之间，并形成具有凹部的孔。 透光层的水平尺寸大于两个相邻的突出部的顶端的宽度，作为电流阻挡层， 覆盖光透射层的表面和非掩模光透射层的外延层的表面的电流扩展层。 由于光透射层的折射率在外延层和孔的折射率之间，表示光透射层与外延层之间的折射率差，当来自发光层的光向上发射时产生的散射的概率可以 增加，从而避免电极的光吸收和提高光提取效率。
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