公开(公告)号：US20070293039A1

公开(公告)日：2007-12-20

申请号：US11454397

申请日：2006-06-16

申请人： Xiaomei Bu ,  Alex See ,  Fan Zhang ,  Jane Hui ,  Tae Jong Lee ,  Liang Choo Hsia

发明人： Xiaomei Bu ,  Alex See ,  Fan Zhang ,  Jane Hui ,  Tae Jong Lee ,  Liang Choo Hsia

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/288 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877

摘要： A method of filling gaps in dielectric layers is disclosed. A wafer is provided having a dielectric layer containing gaps to be filled with copper, some of the gaps, denoted deeper gaps, having aspect ratios so large that filling these gaps with copper using ECP could result in pinhole like voids. A blanket conformal metal barrier layer is formed and the wafer is then submerged in a solution to electroless plate a blanket conformal copper seed layer. A partial filling of deeper gaps with copper reduces the effective aspect ratios of the deeper gaps to the extent that ECP could be used to complete the copper filling of the gaps without forming pinhole like voids. ECP is then used to complete the copper filling of the gaps. The wafer is annealed and CMP performed to planarize the surface, giving rise to a structure in which the gaps are filled with copper and are separated by the dielectric layer.

摘要翻译： 公开了一种在电介质层中填充间隙的方法。 提供具有包含要填充铜的间隙的电介质层的晶片，其中一些间隙表示为更深的间隙，其纵横比大到使用ECP填充这些间隙的铜可导致针孔状空隙。 形成覆盖的共形金属阻挡层，然后将晶片浸没在无电镀平板上的覆盖层保形铜种子层的溶液中。 用铜部分填充更深的间隙可以减少较深间隙的有效纵横比，使得ECP可以用于完成间隙的铜填充而不形成针孔如空隙的程度。 然后使用ECP来完成间隙的铜填充。 对晶片进行退火并进行CMP以平坦化表面，产生其中间隙被铜填充并由介电层分离的结构。

公开(公告)号：US07585768B2

公开(公告)日：2009-09-08

申请号：US11454397

申请日：2006-06-16

申请人： Xiaomei Bu ,  Alex See ,  Fan Zhang ,  Jane Hui ,  Tae Jong Lee ,  Liang Choo Hsia

发明人： Xiaomei Bu ,  Alex See ,  Fan Zhang ,  Jane Hui ,  Tae Jong Lee ,  Liang Choo Hsia

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877

摘要： A method of filling gaps in dielectric layers is disclosed. A wafer is provided having a dielectric layer containing gaps to be filled with copper, some of the gaps, denoted deeper gaps, having aspect ratios so large that filling these gaps with copper using ECP could result in pinhole like voids. A blanket conformal metal barrier layer is formed and the wafer is then submerged in a solution to electroless plate a blanket conformal copper seed layer. A partial filling of deeper gaps with copper reduces the effective aspect ratios of the deeper gaps to the extent that ECP could be used to complete the copper filling of the gaps without forming pinhole like voids. ECP is then used to complete the copper filling of the gaps. The wafer is annealed and CMP performed to planarize the surface, giving rise to a structure in which the gaps are filled with copper and are separated by the dielectric layer.

摘要翻译： 公开了一种在电介质层中填充间隙的方法。 提供具有包含要填充铜的间隙的电介质层的晶片，其中一些间隙表示为更深的间隙，其纵横比大到使用ECP填充这些间隙的铜可导致针孔状空隙。 形成覆盖的共形金属阻挡层，然后将晶片浸没在无电镀平板上的覆盖层保形铜种子层的溶液中。 用铜部分填充更深的间隙可以减少较深间隙的有效纵横比，使得ECP可以用于完成间隙的铜填充而不形成针孔如空隙的程度。 然后使用ECP来完成间隙的铜填充。 对晶片进行退火并进行CMP以平坦化表面，产生其中间隙被铜填充并由介电层分离的结构。

公开(公告)号：US08598031B2

公开(公告)日：2013-12-03

申请号：US12568658

申请日：2009-09-28

申请人： Fan Zhang ,  Xiaomei Bu ,  Jane Hui ,  Tae Jong Lee ,  Liang Choo Hsia

发明人： Fan Zhang ,  Xiaomei Bu ,  Jane Hui ,  Tae Jong Lee ,  Liang Choo Hsia

IPC分类号： H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76822 ,  H01L21/7684 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a semiconductor device is presented. A substrate prepared with a dielectric layer formed thereon is provided. A sacrificial and a hard mask layer are formed on the dielectric layer. The dielectric, sacrificial and hard mask layers are patterned to form an interconnect opening. The interconnect opening is filled with a conductive material to form an interconnect. The conductive material is processed to produce a top surface of the conductive material that is substantially planar with a top surface of the sacrificial layer. The sacrificial layer is removed. The sacrificial layer protects the dielectric layer during processing of the conductive material.