SPIN CURRENT AND MAGNETORESISTANCE FROM THE ORBITAL HALL EFFECT

    公开(公告)号:US20230309411A1

    公开(公告)日:2023-09-28

    申请号:US18042212

    申请日:2021-08-19

    CPC classification number: H10N50/20 H10B61/00 H10N50/80 H10N50/85

    Abstract: Devices for sensing and manipulating magnetic fields based on spin current interactions independent of the Spin Hall Effect (SHE) in heavy metal. Spin current is generated in ordinary metals by conversion of out-of-plane orbital current arising from the Orbital Hall Effect (OHE). The conversion from orbital current to spin current takes place in a thin layer of heavy metal (several atomic layers thick), thereby substantially reducing heavy metal requirements by replacing heavy metal with ordinary metal. Device applications include magnetoresistive sensors for detecting and measuring magnetic fields, and magnetic tunnel junction data storage units.

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