公开(公告)号：US20180224314A1

公开(公告)日：2018-08-09

申请号：US15885964

申请日：2018-02-01

Applicant: Yokogawa Electric Corporation

Inventor： Yusaku YOSHIDA ,  Takashi ARAI ,  Hirokatsu SUNAKAWA ,  Ryuichiro NODA

IPC: G01F23/16 ,  G01F23/00 ,  G08B21/18

CPC classification number: G01F23/164 ,  G01F23/0061 ,  G01F23/0076 ,  G01L19/0046 ,  G01L19/086 ,  G08B21/182

Abstract: A water level gauge according to one aspect of the present invention includes a first communicator configured to receive a first wireless signal indicating an absolute value of water pressure from a water pressure sensor device capable of measuring the absolute value of the water pressure, and a water level calculator configured to calculate a water level on the basis of the absolute value of the water pressure indicated by the first wireless signal received by the first communicator and an atmospheric pressure measured by a barometer.

公开(公告)号：US20130139377A1

公开(公告)日：2013-06-06

申请号：US13689199

申请日：2012-11-29

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Ryuichiro NODA ,  Takashi YOSHIDA

IPC: H04R31/00

CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

Abstract translation: 一种制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，包括：第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 以及（f）通过蚀刻去除所述氧化硅层的至少一部分，使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。