RESONANT PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20220120627A1

    公开(公告)日:2022-04-21

    申请号:US17566326

    申请日:2021-12-30

    Abstract: A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

    RESONANT PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR
    2.
    发明申请
    RESONANT PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR 审中-公开
    谐波传感器及其制造方法

    公开(公告)号:US20150047434A1

    公开(公告)日:2015-02-19

    申请号:US14460684

    申请日:2014-08-15

    Abstract: A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.

    Abstract translation: 谐振压力传感器包括:第一衬底,包括隔膜和设置在隔膜上的至少一个突起;以及设置在第一衬底中的至少一个谐振器,所述谐振器的至少一部分包括在所述突起中,并且所述谐振器被布置 在所述突起的顶部和所述第一基板的中间水平面之间。

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