-
公开(公告)号：US20240235565A1
公开(公告)日：2024-07-11
申请号：US18407613
申请日：2024-01-09
IPC分类号： H03M1/06
CPC分类号： H03M1/0604
摘要： A charge-injection SAR ADC device has a modified charge-injection cell (CIC), and a complementary to absolute temperature (CTAT) circuit for generating a bias voltage. The CIC and CTAT circuits cooperate to correct for process, voltage, and temperature (PVT) variation that affect SAR ADC input full scale. The CIC has been modified to have transistors that are in a cascoded relationship with transistors operating to maintain a reservoir of charge. The CTAT circuit is designed to substantially replicate the CIC, and it tracks the CIC operation to correct variations in transistor threshold voltage due to variations in PVT.
搜索结果
1 条记录 (耗时 0.015 秒)
筛选
AND
AND
过滤
NOT
NOT
扫码加群
