公开(公告)号：US20140226397A1

公开(公告)日：2014-08-14

申请号：US14104406

申请日：2013-12-12

申请人： Yang-Lo AHN ,  Sang-Wan NAM ,  Sang-Won SHIM

发明人： Yang-Lo AHN ,  Sang-Wan NAM ,  Sang-Won SHIM

IPC分类号： G11C16/34

CPC分类号： G11C16/3427 ,  G11C16/3422

摘要： A vertical nonvolatile memory device which includes a plurality of cell strings formed in a direction intersecting with a substrate is provided. The vertical nonvolatile memory device is configured to apply a non-selection read voltage to at least one selection line connected to a cell string from among the plurality of cell strings. The vertical nonvolatile memory device is configured to apply the non-selection read voltage to at least one unselected word line of the cell string a desired time period after the applying of the non-selection read voltage to the at least one selection line.

摘要翻译： 提供一种垂直非易失性存储装置，其包括在与基板相交的方向上形成的多个单元串。 垂直非易失性存储器件被配置为向多个单元串中的连接到单元串的至少一个选择线施加非选择读取电压。 垂直非易失性存储器件被配置为在将非选择读取电压施加到至少一个选择线之后的所需时间周期内将非选择读取电压施加到单元串的至少一个未选择的字线。