公开(公告)号：US06362514B1

公开(公告)日：2002-03-26

申请号：US09352340

申请日：1999-07-13

申请人： Yasuhiro Ido ,  Takeshi Iwamoto ,  Rui Toyota

发明人： Yasuhiro Ido ,  Takeshi Iwamoto ,  Rui Toyota

IPC分类号： H01L2900

CPC分类号： H01L23/5258 ,  H01L23/53228 ,  H01L2924/0002 ,  Y10S257/91 ,  H01L2924/00

摘要： There is described a semiconductor device having a copper fuse which prevents damage to a silicon substrate beneath the copper fuse, which would otherwise be caused by a laser beam radiated to blow the copper fuse. A light absorbing layer is formed on the copper fuse layer from material whose light absorption coefficient is greater than that of a copper wiring layer. Light absorbed by the light absorbing layer is transmitted, through heat conduction, to the copper wiring layer beneath the light absorbing layer and further to a barrier metal layer beneath the copper wiring layer. Even when the widely-used conventional laser beam of infrared wavelength is used, the copper fuse can be blown. Since a guard layer is formed below the fuse layer, there can be prevented damage to the silicon substrate, which would otherwise be caused by exposure to the laser beam of visible wavelength. Therefore, the copper fuse can be blown even by use of a laser beam of visible wavelength whose light absorption coefficient for copper is high.

摘要翻译： 描述了具有铜熔丝的半导体器件，其防止对铜熔丝下方的硅衬底的损坏，否则这将由被辐射以吹制铜熔丝的激光束引起。 光吸收层由光吸收系数大于铜布线层的材料形成在铜熔丝层上。 由光吸收层吸收的光通过热传导传递到光吸收层下面的铜布线层，并且进一步传输到铜布线层下面的阻挡金属层。 即使使用广泛使用的红外波长的常规激光束，也可以熔断铜熔丝。 由于保护层形成在熔丝层的下面，所以可以防止对硅衬底的损坏，否则这将因暴露于可见波长的激光束而引起。 因此，即使通过使用铜的光吸收系数高的可见波长的激光束也能够熔断铜熔丝。

公开(公告)号：US06339250B1

公开(公告)日：2002-01-15

申请号：US09213288

申请日：1998-12-17

申请人： Yasuhiro Ido ,  Takeshi Iwamoto ,  Rui Toyota

发明人： Yasuhiro Ido ,  Takeshi Iwamoto ,  Rui Toyota

IPC分类号： H01L21425

CPC分类号： H01L23/5258 ,  H01L27/112 ,  H01L2924/0002 ,  H01L2924/00

摘要： On a silicon substrate, silicon oxide film is formed. On the silicon oxide film, a BPSG film is formed. On the BPSG film, a silicon oxide film which does not include at least phosphorus and has a thickness equal to or more than about 1 &mgr;m is formed as a protective film. On the silicon film, a fuse is formed. Covering the fuse, a silicon oxide film which does not include at least phosphorus is formed on the silicon oxide film. Thus, the corrosion of the fuse is prevented, whereby a semiconductor device with highly reliable metal interconnection can be obtained.

摘要翻译： 在硅衬底上形成氧化硅膜。 在氧化硅膜上形成BPSG膜。 在BPSG膜上形成至少包含磷并且具有等于或大于1μm的厚度的氧化硅膜作为保护膜。 在硅膜上形成熔丝。 覆盖保险丝，在氧化硅膜上形成至少不含磷的氧化硅膜。 因此，可以防止熔丝的腐蚀，从而可以获得具有高度可靠的金属互连的半导体器件。

公开(公告)号：US06259147B1

公开(公告)日：2001-07-10

申请号：US09226161

申请日：1999-01-07

申请人： Takeshi Iwamoto ,  Rui Toyota ,  Kaoru Motonami ,  Yasuhiro Ido ,  Masatoshi Kimura ,  Kakutaro Suda ,  Kazuhide Kawabe ,  Hideki Doi ,  Hiroaki Sekikawa

发明人： Takeshi Iwamoto ,  Rui Toyota ,  Kaoru Motonami ,  Yasuhiro Ido ,  Masatoshi Kimura ,  Kakutaro Suda ,  Kazuhide Kawabe ,  Hideki Doi ,  Hiroaki Sekikawa

IPC分类号： H01L2900

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 &mgr;m or 4.5 to 5.5 &mgr;m. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.

摘要翻译： 半导体器件包括：绝缘层; 保险丝层，其在一个方向上在绝缘层上延伸并通过光辐射而断开以控制冗余电路; 沿熔丝层的至少一侧的绝缘层上的伪熔丝层; 覆盖熔丝层和伪熔丝层的另一绝缘层; 以及形成在另一绝缘层上并且在与熔丝层相对的区域中具有开口的保护膜。 具有小于4μm或4.5-5.5μm间隔的保险丝层。 这种结构允许具有能够可靠地断开的熔丝层的半导体器件并且提供较小的吹扫痕迹。