公开(公告)号：US07148926B2

公开(公告)日：2006-12-12

申请号：US10311672

申请日：2002-05-09

申请人： Yasuhiro Morinaka ,  Hiroyoshi Komobuchi ,  Akito Kidera ,  Toshiya Fujii

发明人： Yasuhiro Morinaka ,  Hiroyoshi Komobuchi ,  Akito Kidera ,  Toshiya Fujii

IPC分类号： H04N3/14

CPC分类号： H04N9/045 ,  H04N5/347 ,  H04N5/3728

摘要： A color filter arrangement (11) is used, in which a plurality of filter units are each made of 2×2 arrangements of red (R), green (G), green (G) and blue (B) color elements. First, signal charges are added up for all pixels belonging to each of a plurality of pixel blocks made of quadratic arrangements of 3×3 of pixels, which are larger than the filter units (2×2 arrangement). Then, compressed color information for each of the pixel blocks is obtained from a result of the addition for each pixel block, taking the 2×2 arrangements of pixel blocks as large filter units.

摘要翻译： 使用滤色器装置（11），其中多个滤色器单元分别由红（R），绿（G），绿（G）和蓝（B）色元素的2×2布置构成。 首先，对于属于大于滤波器单元（2x2排列）的3×3像素的二次排列构成的多个像素块中的每一个像素块的所有像素，相加信号电荷。 然后，以每个像素块的加法结果，以像素块的2×2布置为大的滤波器单位，获得每个像素块的压缩颜色信息。

公开(公告)号：US20050088557A1

公开(公告)日：2005-04-28

申请号：US10990724

申请日：2004-11-17

申请人： Takao Kuroda ,  Sei Suzuki ,  Akito Kidera

发明人： Takao Kuroda ,  Sei Suzuki ,  Akito Kidera

IPC分类号： H01L27/148 ,  H04N3/14 ,  H04N5/357 ,  H04N5/376

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。

公开(公告)号：US07038723B1

公开(公告)日：2006-05-02

申请号：US09558888

申请日：2000-04-26

申请人： Takao Kuroda ,  Sei Suzuki ,  Akito Kidera

发明人： Takao Kuroda ,  Sei Suzuki ,  Akito Kidera

IPC分类号： H04N3/14

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45–47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至电极41,45-47中的至少一个，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。