公开(公告)号：US20100311630A1

公开(公告)日：2010-12-09

申请号：US12794028

申请日：2010-06-04

申请人： Yasumasa MORI ,  Hirotaka Shida ,  Kazuo Kawaguchi ,  Hiroyuki Yano ,  Mie Matsuo

发明人： Yasumasa MORI ,  Hirotaka Shida ,  Kazuo Kawaguchi ,  Hiroyuki Yano ,  Mie Matsuo

IPC分类号： C11D7/32

CPC分类号： C09K3/1472 ,  H01L21/02074 ,  H01L21/321

摘要： A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11.According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.

摘要翻译： 本发明的表面处理组合物是用于处理包含由特定结构式表示的化合物（A）和沸点为一个大气压的溶剂（B）的半导体衬底的包含金属线的表面的组合物 为50〜300℃，pH为4〜11。根据本发明的表面处理用组合物，能够抑制半导体基板的金属配线的氧化，使金属配线部的平坦度下降 可以抑制异常氧化。 而且，在半导体基板的含有金属配线的表面上存在绝缘膜或阻挡金属膜的情况下，金属配线与绝缘膜或阻挡金属膜之间的界面处的金属配线的表面粗糙度 可以抑制。