公开(公告)号：US09856401B2

公开(公告)日：2018-01-02

申请号：US15278911

申请日：2016-09-28

申请人： YAMAGUCHI SEIKEN KOGYO CO., LTD.

发明人： Toru Iwata ,  Akira Sugawa

IPC分类号： C09G1/02 ,  B24B37/04 ,  G11B5/84 ,  C09K3/14 ,  C01B33/14

CPC分类号： C09G1/02 ,  B24B37/042 ,  B24B37/044 ,  C01B33/14 ,  C01P2004/62 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1463 ,  C09K3/1472 ,  G11B5/8404

摘要： Embodiments of the invention provide a polishing composition including colloidal silica, pulverized wet-process silica particles, and a water-soluble polymer compound, wherein the water-soluble polymer compound is a polymer or copolymer having a constituent unit derived from an unsaturated aliphatic carboxylic acid. Various embodiments achieve a high polishing rate and obtain a good surface smoothness and end-face shape without the use of alumina particles.

公开(公告)号：US20160325398A1

公开(公告)日：2016-11-10

申请号：US15110320

申请日：2015-01-19

申请人： ASAHI KASEI KOGYO CO., LTD.

发明人： Shunichi FUJIMOTO ,  Tetsuji YAMASHITA

IPC分类号： B24B37/24 ,  C09K3/14 ,  C09G1/02

CPC分类号： B24B37/245 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/02024

摘要： [Object] The present invention is objected to polish the surface of the object material with a high quality at a high polishing rate.[Solution] The object surface is polished using a wet polishing method. Slurry is produced by scattering abrasive particles into pure water. In the abrasive particle, where components which has a mechanochemical effect and which reacts to the friction heat generated in polishing the object material are joined with each other and integrated to a particle. There, respective component is joined with each other using a mechanical alloying process, while maintaining the inherent material properties. When the slurry is used in a lapping process of sapphire, silicon carbide, gallium nitride and the like, the polishing process can be substantially shortened and the processing cost is drastically reduced. Further, it secures a high quality of the polishing surface. The abrasive particle can be used repeatedly in the polishing process. Since the pH value of the slurry is around 3 to 9, it does not deteriorate working environment and the liquid-waste treatment is easy.

摘要翻译： [解决方案]使用湿式抛光方法对物体表面进行抛光。 通过将磨料颗粒散射到纯水中而产生浆料。 在磨料颗粒中，其中具有机械化学作用并且与抛光目标材料中产生的摩擦热反应的组分彼此连接并与颗粒结合。 在这里，各个部件使用机械合金化方法彼此连接，同时保持固有的材料性质。 当在蓝宝石，碳化硅，氮化镓等的研磨工艺中使用该浆料时，可以显着缩短抛光工艺，并显着降低加工成本。 此外，它确保了抛光表面的高质量。 磨料颗粒可以在抛光过程中重复使用。 由于浆料的pH值为3〜9左右，因此不会使工作环境恶化，容易进行废液处理。

公开(公告)号：US20160312069A1

公开(公告)日：2016-10-27

申请号：US15104449

申请日：2014-12-16

申请人： RHODIA OPERATIONS

发明人： Eisaku SUDA ,  Manabu YUASA ,  Takao SEKIMOTO

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01F17/0043 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/22 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  C09K3/1472

摘要： The present invention relates to a suspension of cerium oxide particles in a liquid phase, in which said particles comprise secondary particles comprising primary particles, and a process for preparing said liquid suspension in which the cerium IV/total cerium molar ratio before precipitation is comprised between 1/10000 and 1/500000 and that the thermal treatment is being carried out under an inert atmosphere.

摘要翻译： 本发明涉及二氧化铈颗粒在液相中的悬浮液，其中所述颗粒包含包含初级颗粒的二次颗粒，以及制备所述液体悬浮液的方法，其中沉淀前的铈IV /总铈摩尔比包括在 1/10000和1/500000，热处理在惰性气氛下进行。

公开(公告)号：US09299573B2

公开(公告)日：2016-03-29

申请号：US14384729

申请日：2013-03-12

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Kouji Mishima ,  Masato Fukasawa ,  Masaya Nishiyama

IPC分类号： H01L21/304 ,  H01L21/306 ,  C09K13/06 ,  C09K3/14 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  B81C1/00 ,  H01L21/321 ,  H01L21/768 ,  C09G1/02 ,  H01L21/3105

CPC分类号： H01L21/30625 ,  B81C1/00 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  C09K3/1472 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76898

摘要： Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

摘要翻译： 提供一种抛光方法，其对具有（1）氮化硅作为阻挡体的基板进行抛光，并且在止动件上抛光（2）至少一部分布线金属，和（3）绝缘材料的至少一部分。 该方法包括提供CMP浆料，从而研磨（2）布线金属和（3）绝缘材料的步骤。 CMP浆料包含（A）（a）阴离子且不含疏水性取代基的单体和（b）含有疏水取代基的单体的共聚物; （B）磨粒; （C）酸; （D）氧化剂; 和（E）液体介质中，组分（B）在CMP浆料中的ζ电位为+ 10mV以上，成分（A）的共聚比（a）:( b）为25:75〜 75:25为摩尔比，pH为5.0以下。

公开(公告)号：US20150030650A1

公开(公告)日：2015-01-29

申请号：US14506090

申请日：2014-10-03

申请人： RHODIA OPERATIONS

发明人： Guillaume CRINIERE ,  Laurent THIERS

IPC分类号： C09G1/04 ,  A61K8/04 ,  B24B37/04 ,  A61Q17/04 ,  C09D7/12 ,  A61K8/02 ,  A61K8/19

CPC分类号： C09G1/04 ,  A61K8/0241 ,  A61K8/044 ,  A61K8/19 ,  A61K2800/10 ,  A61K2800/413 ,  A61Q17/04 ,  B24B37/044 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/22 ,  C08K3/22 ,  C08K2003/2213 ,  C09D7/61 ,  C09D7/68 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C09K3/1472

摘要： The invention relates to a suspension of cerium oxide particles, of which the particles (secondary particles) have an average size of at most 200 nm, these secondary particles consisting of primary particles whose average size measured by TEM is of at most 150 nm with a standard deviation of at most 30% of the value of said average size, and for which the ratio of the average size measured by TEM to the average size measured by BET is at least 1.5. This suspension is prepared from a solution of a cerium III salt, comprising a colloidal dispersion of cerium IV, which is brought into contact, in the presence of nitrate ions and under an inert atmosphere, with a base; the medium obtained is subjected to a thermal treatment under an inert atmosphere and then acidified and washed. The suspension can be used for polishing.

摘要翻译： 本发明涉及二氧化铈颗粒的悬浮液，其中颗粒（二次颗粒）的平均尺寸至多为200nm，这些二次颗粒由通过TEM测量的平均尺寸为至多150nm的一次颗粒组成，其中a 所述平均尺寸值的至多30％的标准偏差，通过TEM测量的平均尺寸与通过BET测量的平均尺寸的比率至少为1.5。 该悬浮液是由铈III盐的溶液制备的，其中铈铈盐在硝酸根离子的存在下和在惰性气氛下与碱接触，其中铈IV的胶体分散体接触; 将所得介质在惰性气氛下进行热处理，然后酸化并洗涤。 悬浮液可用于抛光。

公开(公告)号：US20150000208A1

公开(公告)日：2015-01-01

申请号：US14349276

申请日：2012-10-04

申请人： SHIN-ETSU HANDOTAI CO., LTD

发明人： Koji Kitagawa

IPC分类号： C09K3/14

CPC分类号： C09K3/1472 ,  B28D5/007 ,  B28D5/045 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/304 ,  Y02P70/179

摘要： The present invention is directed to a method for producing a slurry used in a wire saw, including: re-pulverizing with a jet mill part or all of the abrasive grains pulverized with a roller mill or a ball mill such that the abrasive grains have an average circularity of 0.900 or more; and blending the abrasive grains whose the average circularity is 0.900 or more with a coolant to produce the slurry, and to a slurry including blended abrasive grains having an average circularity of 0.900 or more. The invention enables suppression of reduction in slicing capability due to reduction in abrasive-grains concentration and of increased costs due to reduction in slicing quality and in productivity, even when abrasive grains having a grain diameter smaller than that of #2000-size abrasive grains are used to reduce a kerf loss.

摘要翻译： 本发明涉及一种用于线锯的浆料的制造方法，其特征在于，包括：用喷射磨机将由磨粉机或球磨机粉碎的部分或全部磨粒再粉碎，使磨粒具有 平均圆形度0.900以上; 并将平均圆形度为0.900以上的磨粒与冷却剂混合以制备浆料，以及包含平均圆形度为0.900以上的混合磨粒的浆料。 本发明能够抑制由于削减磨粒质量和生产率而导致磨粒浓度降低和成本增加的切片能力降低，即使当粒径小于＃2000-尺寸磨粒的磨粒为 用于减少切口损失。

公开(公告)号：US08257504B2

公开(公告)日：2012-09-04

申请号：US12794028

申请日：2010-06-04

申请人： Yasumasa Mori ,  Hirotaka Shida ,  Kazuo Kawaguchi ,  Hiroyuki Yano ,  Mie Matsuo

发明人： Yasumasa Mori ,  Hirotaka Shida ,  Kazuo Kawaguchi ,  Hiroyuki Yano ,  Mie Matsuo

IPC分类号： C25F3/30

CPC分类号： C09K3/1472 ,  H01L21/02074 ,  H01L21/321

摘要： A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11.According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.

摘要翻译： 本发明的表面处理组合物是用于处理包含由特定结构式表示的化合物（A）和沸点为一个大气压的溶剂（B）的半导体衬底的包含金属线的表面的组合物 为50〜300℃，pH为4〜11。根据本发明的表面处理用组合物，能够抑制半导体基板的金属配线的氧化，使金属配线部的平坦度下降 可以抑制异常氧化。 而且，在半导体基板的含有金属配线的表面上存在绝缘膜或阻挡金属膜的情况下，金属配线与绝缘膜或阻挡金属膜之间的界面处的金属配线的表面粗糙度 可以抑制。

公开(公告)号：US20110225897A1

公开(公告)日：2011-09-22

申请号：US13058771

申请日：2009-07-07

申请人： Guillaume Criniere ,  Laurent Thiers

发明人： Guillaume Criniere ,  Laurent Thiers

IPC分类号： C09K3/14 ,  C01F17/00

CPC分类号： C09G1/04 ,  A61K8/0241 ,  A61K8/044 ,  A61K8/19 ,  A61K2800/10 ,  A61K2800/413 ,  A61Q17/04 ,  B24B37/044 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/22 ,  C08K3/22 ,  C08K2003/2213 ,  C09D7/61 ,  C09D7/68 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C09K3/1472

摘要： Suspensions of cerium oxide particles, well suited for polishing applications, the particles (secondary particles) of which have an average size of at most 200 nm, these secondary particles are formed from primary particles whose average size measured by TEM is at most 150 nm with a standard deviation of at most 30% of the value of this average size, and for which the ratio of the average size measured by TEM to the average size measured by BET is at least 1.5. Such suspensions are prepared from solutions of a cerium III salt, comprising a colloidal dispersion of cerium IV, which are contacted, in the presence of nitrate ions and under an inert atmosphere, with a base, and the medium obtained is subjected to a thermal treatment under an inert atmosphere and then acidified and washed.

摘要翻译： 这些二次粒子的平均粒径为200nm以下的二氧化铈颗粒的悬浮液，非常适用于研磨用途的二氧化铈粒子，通过TEM测定的平均粒径为150nm以下的一次粒子形成， 该平均尺寸值的至多30％的标准偏差，通过TEM测量的平均尺寸与通过BET测量的平均尺寸的比率至少为1.5。 这种悬浮液由铈III盐的溶液制备，铈铈盐包括铈离子的胶体分散体，在硝酸根离子存在下，在惰性气氛下与碱接触，将所得介质进行热处理 在惰性气氛下，然后酸化并洗涤。

公开(公告)号：US20100311630A1

公开(公告)日：2010-12-09

申请号：US12794028

申请日：2010-06-04

申请人： Yasumasa MORI ,  Hirotaka Shida ,  Kazuo Kawaguchi ,  Hiroyuki Yano ,  Mie Matsuo

发明人： Yasumasa MORI ,  Hirotaka Shida ,  Kazuo Kawaguchi ,  Hiroyuki Yano ,  Mie Matsuo

IPC分类号： C11D7/32

CPC分类号： C09K3/1472 ,  H01L21/02074 ,  H01L21/321

摘要： A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11.According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.

摘要翻译： 本发明的表面处理组合物是用于处理包含由特定结构式表示的化合物（A）和沸点为一个大气压的溶剂（B）的半导体衬底的包含金属线的表面的组合物 为50〜300℃，pH为4〜11。根据本发明的表面处理用组合物，能够抑制半导体基板的金属配线的氧化，使金属配线部的平坦度下降 可以抑制异常氧化。 而且，在半导体基板的含有金属配线的表面上存在绝缘膜或阻挡金属膜的情况下，金属配线与绝缘膜或阻挡金属膜之间的界面处的金属配线的表面粗糙度 可以抑制。

公开(公告)号：US07828628B2

公开(公告)日：2010-11-09

申请号：US11946531

申请日：2007-11-28

申请人： Kenji Aoki ,  Toru Yamazaki ,  Takehiro Watanabe ,  Naoyuki Hamada

发明人： Kenji Aoki ,  Toru Yamazaki ,  Takehiro Watanabe ,  Naoyuki Hamada

IPC分类号： B24B7/22

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1472 ,  H01L29/1608

摘要： A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The artificial diamond clusters include approximately spherical agglomerate particles with average particle size D50 of 20 nm or more and 50 nm or less, having primary particles with particle diameters of 2 nm or more and 10 nm or less. A rough polishing process is carried out first such that an average surface roughness of 0.5 nm or more and 1 nm or less is obtained, followed by a finishing process such that the average surface roughness of said surface becomes 0.2 nm or less.

摘要翻译： 通过使用分散在分散剂中的具有研磨人造金刚石颗粒的抛光油浆来研磨诸如GaN衬底或SiC衬底的硬质晶体衬底。 人造金刚石团簇包括具有粒径为2nm以上且10nm以下的一次粒子的平均粒径D 50为20nm以上且50nm以下的近似球状的聚集体颗粒。 首先进行粗抛光处理，使得得到0.5nm以上且1nm以下的平均表面粗糙度，然后进行表面的平均表面粗糙度为0.2nm以下的精加工。