公开(公告)号：US20120049330A1

公开(公告)日：2012-03-01

申请号：US13266159

申请日：2010-04-09

申请人： Yasushi Yukimoto

发明人： Yasushi Yukimoto

IPC分类号： H01L29/36 ,  H01L21/322 ,  H01L21/20

CPC分类号： H01L21/3221 ,  H01L21/3225

摘要： A method of producing a silicon wafer comprises the steps of subjecting a silicon wafer, which has been sliced from a silicon single crystal ingot grown by the Czochralski method, to RTA treatment in a nitriding gas atmosphere; forming an oxide film on a surface of either side of the wafer; then forming a polysilicon layer thereon. The polysilicon layer on the front side of the wafer is removed and a wafer free of crystal defects in the surface part and with improved gettering performance is obtained. The polysilicon layer may be formed not on the surface of either side of the wafer but only on the back side thereof. It is desirable that a wafer composed of only a defect-free region is used as the source material since a defect-free layer can be stably secured in the wafer surface part.

摘要翻译： 一种硅晶片的制造方法，其特征在于，在氮化气体气氛下，对经由切克劳斯基（Czochralski）生长的硅单晶锭切片的硅晶片进行RTA处理， 在晶片的任一侧的表面上形成氧化膜; 然后在其上形成多晶硅层。 去除晶片前侧的多晶硅层，并且获得表面部分中没有晶体缺陷并且具有改善的吸杂性能的晶片。 多晶硅层可以不形成在晶片的任一侧的表面上，而仅在其背面。 希望由仅由无缺陷区构成的晶片用作源材料，因为可以在晶片表面部分中稳定地确保无缺陷层。