公开(公告)号：US5244834A

公开(公告)日：1993-09-14

申请号：US933704

申请日：1992-08-24

申请人： Yasutoshi Suzuki ,  Namoi Awano ,  Kouichi Hoshino ,  Hajime Inuzka

发明人： Yasutoshi Suzuki ,  Namoi Awano ,  Kouichi Hoshino ,  Hajime Inuzka

IPC分类号： H01L27/06 ,  H01L27/22 ,  H01L43/06

CPC分类号： H01L27/22 ,  H01L27/0605

摘要： A Group III and V element compound semiconductor such as gallium arsenide is formed on a semiconductor wafer by so-called MOCVD. A first pair of convex portions, a second pair of convex portions and crossing portion are formed from such compound semiconductor by an etching using a predetermined etching substance so that one convex portion of each pair is opposite to the other convex portion thereof and that a same crystalline surface of the crossing portion is exposed at all points where the first pair of convex portions crosses the second pair of convex portions. A pair of input terminals and a pair of output terminals are electrically connected to each convex portion of the first pair and the second pair, respectively so as to input electric current to each convex portion of the first pair and to output voltage generated in response to a magnetic field strength in such compound semiconductor. Accordingly, the occurrence of the unbalanced voltage is prevented because of the geometrical balance of two pair convex portions and crossing portion.

摘要翻译： 通过所谓的MOCVD在半导体晶片上形成III族和V族元素化合物半导体，例如砷化镓。 通过使用预定的蚀刻物质的蚀刻，由这种化合物半导体形成第一对凸部，第二对凸部和交叉部，使得每一对凸部与其另一个凸部相对，并且相同 所述交叉部的结晶面在所述第一对凸部与所述第二对凸部交叉的所有点处露出。 一对输入端子和一对输出端子分别电连接到第一对和第二对的每个凸部，以便将电流输入到第一对的每个凸部，并输出响应于 这种化合物半导体中的磁场强度。 因此，由于两对凸部和交叉部的几何平衡，防止了不平衡电压的发生。