公开(公告)号：US07411226B2

公开(公告)日：2008-08-12

申请号：US11115938

申请日：2005-04-27

申请人： Yeong-Chang Choug ,  Ronald Grundbacher ,  Po-Hsin Liu ,  Denise L. Leung ,  Richard Lai

发明人： Yeong-Chang Choug ,  Ronald Grundbacher ,  Po-Hsin Liu ,  Denise L. Leung ,  Richard Lai

IPC分类号： H01L31/00 ,  H01L29/80 ,  H01L21/28

CPC分类号： H01L29/7783 ,  H01L29/42316 ,  H01L29/475

摘要： An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.

摘要翻译： InP高电子迁移率晶体管（HEMT）结构，其中栅极金属堆叠在栅极金属堆叠和肖特基势垒层之间的结处包括诸如钼（Mo）或铂（Pt）的难熔金属的附加薄层 在HEMT结构中。 难熔金属层减少或消除了栅极金属和阻挡层之间的肖特基结的长期降解，从而显着提高了InP HEMT的长期可靠性，但不牺牲HEMT性能，无论是用作分立器件还是在 集成电路。