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1.发明授权Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory 有权用于保护ONO结构的氮化物阻挡层免受SONOS闪存的制造中的顶部氧化物损失公开(公告)号：US06680509B1
公开(公告)日：2004-01-20
申请号：US10158044
申请日：2002-05-30
申请人： Yider Wu , Jean Yee-Mei Yang , Mark Ramsbey , Emmanuel H. Lingunis , Yu Sun
发明人： Yider Wu , Jean Yee-Mei Yang , Mark Ramsbey , Emmanuel H. Lingunis , Yu Sun
IPC分类号： H01L29792
CPC分类号： H01L27/11568 , H01L27/115 , Y10S438/954
摘要： A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form, a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.
摘要翻译： 一种用于制造具有掩埋位线的SONOS器件的方法，包括以下步骤：提供具有覆盖在半导体衬底上的ONO结构的半导体衬底; 在ONO结构上形成氮化物阻挡层以形成四层堆叠; 在氮化物阻挡层上形成图案化的光致抗蚀剂层; 将As或P离子注入四层堆叠中以形成埋在ONO结构下的位线; 剥离光致抗蚀剂层并清洁四层堆叠的上表面; 并通过施加氧化循环来合并四层堆叠。 本发明还涉及包括氮化物阻挡层的SONOS型器件。
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2.发明授权Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory 有权用于在SONOS闪存的制造中保护ONO结构免受顶部氧化物损失的氮化物阻挡层公开(公告)号：US06440797B1
公开(公告)日：2002-08-27
申请号：US09966702
申请日：2001-09-28
申请人： Yider Wu , Jean Yee-Mei Yang , Mark Ramsbey , Emmanuel H. Lingunis , Yu Sun
发明人： Yider Wu , Jean Yee-Mei Yang , Mark Ramsbey , Emmanuel H. Lingunis , Yu Sun
IPC分类号： H01L218247
CPC分类号： H01L27/11568 , H01L27/115 , Y10S438/954
摘要： A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.
摘要翻译： 一种用于制造具有掩埋位线的SONOS器件的方法，包括以下步骤：提供具有覆盖在半导体衬底上的ONO结构的半导体衬底; 在ONO结构上形成氮化物阻挡层以形成四层堆叠; 在所述氮化物阻挡层上形成图案化的光致抗蚀剂层; 将As或P离子注入四层堆叠中以形成埋在ONO结构下的位线; 剥离光致抗蚀剂层并清洁四层堆叠的上表面; 并通过施加氧化循环来合并四层堆叠。 本发明还涉及包括氮化物阻挡层的SONOS型器件。
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