公开(公告)号：US06537887B2

公开(公告)日：2003-03-25

申请号：US09727325

申请日：2000-11-30

申请人： Yih-Feng Chyan ,  Chung Wai Leung ,  Yi Ma ,  Demi Nguyen

发明人： Yih-Feng Chyan ,  Chung Wai Leung ,  Yi Ma ,  Demi Nguyen

IPC分类号： H01L218222

CPC分类号： H01L29/66272 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/8249 ,  H01L27/0623

摘要： An integrated circuit and a process for making the same are provided. The circuit has a nitrogen implanted emitter window, wherein the nitrogen has been implanted into the emitter window after the emitter window etch, but prior to the emitter conductor deposition. Nitrogen implantation is expected to minimize oxide growth variation.