公开(公告)号：US20130160952A1

公开(公告)日：2013-06-27

申请号：US13599548

申请日：2012-08-30

申请人： Yisung HWANG ,  Jungchul LEE ,  Jaehong KIM ,  Taegyeong CHUNG

发明人： Yisung HWANG ,  Jungchul LEE ,  Jaehong KIM ,  Taegyeong CHUNG

IPC分类号： H01L21/46

CPC分类号： H01L21/67144 ,  H01L2924/0002 ,  Y10T156/1744 ,  Y10T156/1746 ,  Y10T156/1761 ,  Y10T156/1776 ,  H01L2924/00

摘要： An apparatus for bonding semiconductor chips may comprise transfer rails configured to transfer substrates, loading members configured to load the substrates onto the transfer rails, unloading members configured to unload the substrates from the transfer rails, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates. An apparatus for bonding semiconductor chips may comprise a transfer rail configured to transfer substrates, loading members configured to load the substrates onto the transfer rail, unloading members configured to unload the substrates from the transfer rail, a buffer member at a side of the transfer rail configured to temporarily receive the substrates loaded by the loading members, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates.

摘要翻译： 用于接合半导体芯片的装置可以包括被配置为传送基板的传送轨道，被配置为将基板装载到传送轨道上的装载部件，被配置为从传送轨道卸载基板的卸载部件;第一晶片供给单元，被配置为提供第一晶片 包括半导体芯片和/或被配置为将半导体芯片接合到基板的接合单元。 一种用于接合半导体芯片的设备可以包括：传送轨道，其被配置为传送基板，被配置为将基板装载到传送轨道上的装载部件，被配置为从传送轨道卸载基板的卸载部件;在传送轨道侧的缓冲部件 被配置为临时接收由所述加载部件加载的基板，被配置为提供包括半导体芯片的第一晶片的第一晶片供给单元和/或被配置为将所述半导体芯片接合到所述基板的接合单元。

公开(公告)号：US20120031953A1

公开(公告)日：2012-02-09

申请号：US13195313

申请日：2011-08-01

申请人： Myeong Soon PARK ,  Taegyeong CHUNG ,  Eunchul AHN ,  Ulhyoung LEE ,  Sanghee LEE

发明人： Myeong Soon PARK ,  Taegyeong CHUNG ,  Eunchul AHN ,  Ulhyoung LEE ,  Sanghee LEE

IPC分类号： B23K3/08 ,  B23K3/04

CPC分类号： H01L21/68764 ,  H01L21/67778 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68771

摘要： A method of forming wafer level bump includes forming at least one pre-bump on a first surface of a wafer, and performing a bump reflow process to the pre-bump while the first surface faces downward, such that a bump is formed.

摘要翻译： 一种形成晶片级突起的方法包括在晶片的第一表面上形成至少一个预凸块，并且在第一表面朝向下方的同时对凸块进行凸点回流处理，从而形成凸块。