公开(公告)号：US20010038952A1

公开(公告)日：2001-11-08

申请号：US09295352

申请日：1999-04-21

Applicant: Yong-Hoon Kim

Inventor： YONG-HOON KIM ,  JIN-HONG PARK

IPC: G03F009/00 ,  G03C005/00

CPC classification number: G03F1/29

Abstract: A method of fabricating a phase shift mask is provided in which light shield film patterns for setting a phase shift region and a phase non-shift region are simultaneously formed on a substrate. A groove is formed in the substrate set as the phase shift region. The light shield film pattern, which contacts the groove and is formed on a region of the substrate set as the phase non-shift region, is removed. A phase shift layer is formed between the substrate and the light shield film pattern. In this case, regions set by the light shield film pattern become opposite to when the phase shift layer is not formed. That is, a phase shift region is changed into a phase non-shift region, and the phase non-shift region is changed into the phase shift region. As described above, the phase shift region and the phase non-shift region are simultaneously set when the light shield film pattern is formed, thus preventing the position of the phase shift or non-shift region from being shifted due to sequential formation of the phase shift and non-shift regions.

Abstract translation: 提供一种制造相移掩模的方法，其中在衬底上同时形成用于设置相移区域和相位非移位区域的光屏蔽膜图案。 在衬底组中形成有作为相移区域的沟槽。 除去接触凹槽并形成在作为相位非移位区域的基板的区域上的遮光膜图案。 在基板和遮光膜图案之间形成相移层。 在这种情况下，由遮光膜图案设定的区域与没有形成相移层时相反。 也就是说，相移区域被改变为相位非移位区域，并且相位非移位区域变为相移区域。 如上所述，当形成遮光膜图形时，相移区域和相位非移位区域被同时设置，从而防止相移或非移位区域的位置由于相位的顺序形成而偏移 移位和非移位区域。