公开(公告)号：US20080272359A1

公开(公告)日：2008-11-06

申请号：US11952829

申请日：2007-12-07

申请人： Yongho HA ,  Jihye YI ,  Hyunjo KIM

发明人： Yongho HA ,  Jihye YI ,  Hyunjo KIM

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

摘要： A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.

摘要翻译： 公开了一种相变存储器单元。 根据本发明的实施例，与先前已知的相变存储器单元相比，形成了与一个电极具有减小的接触面积的相变存储单元。 该接触区域可以是电极中的一个的侧壁或通过电极的接触开口的周边边缘。 因此，当电极的厚度相对较薄时，电极与相变材料图案之间的接触面积相对较小。 结果，可以降低相变存储器件的功耗并形成可靠且致密的相变存储单元。