公开(公告)号：US20140284533A1

公开(公告)日：2014-09-25

申请号：US13963710

申请日：2013-08-09

申请人： Yoshiaki ASAO ,  Hideaki HARAKAWA

发明人： Yoshiaki ASAO ,  Hideaki HARAKAWA

IPC分类号： H01L43/02

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  H01L43/08

摘要： According to one embodiment, a semiconductor memory device comprises a cell transistor includes a first gate electrode buried in a semiconductor substrate and a first diffusion layer and a second diffusion layer formed to sandwich the first gate electrode, a first lower electrode formed on the first diffusion layer, a magnetoresistive element formed on the first lower electrode to store data according to a change in a magnetization state and connected to a bit line located above, a second lower electrode formed on the second diffusion layer, and a first contact formed on the second lower electrode and connected to a source line located above. A contact area between the second lower electrode and the second diffusion layer is larger than a contact area between the first contact and the second lower electrode.

摘要翻译： 根据一个实施例，一种半导体存储器件包括：单元晶体管，包括埋在半导体衬底中的第一栅电极和形成为夹着第一栅电极的第一扩散层和第二扩散层;形成在第一扩散层上的第一下电极 层，形成在所述第一下电极上以根据磁化状态的变化存储数据并连接到位于上方的位线的磁阻元件，形成在所述第二扩散层上的第二下电极，以及形成在所述第二扩散层上的第一触点 下电极并连接到位于上方的源极线。 第二下部电极和第二扩散层之间的接触面积大于第一接触部和第二下部电极的接触面积。

公开(公告)号：US20120248517A1

公开(公告)日：2012-10-04

申请号：US13241060

申请日：2011-09-22

申请人： Hideaki HARAKAWA

发明人： Hideaki HARAKAWA

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a substrate and a plurality of magneto-resistive effect devices provided on a substrate. Two of the plurality of magneto-resistive effect devices, that are nearest to each other when viewed from above, differ from each other in distance from the substrate.

摘要翻译： 根据一个实施例，磁存储器件包括衬底和设置在衬底上的多个磁阻效应器件。 当从上方观察时彼此最接近的多个磁阻效应器件中的两个在与衬底的距离上彼此不同。