公开(公告)号：US20110241135A1

公开(公告)日：2011-10-06

申请号：US13050083

申请日：2011-03-17

申请人： Yoshihiko Kurui ,  Yoshiaki Shimooka ,  Hiroaki Yamazaki ,  Akihiro Kojima

发明人： Yoshihiko Kurui ,  Yoshiaki Shimooka ,  Hiroaki Yamazaki ,  Akihiro Kojima

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0221

摘要： According to an embodiment of the present invention, a MEMS element includes: a semiconductor substrate; an island insulating layer formed on the substrate, the insulating layer including an air gap layer having an air gap group, the air gap group including a plurality of air gaps disposed in an in-plane direction; and a MEMS capacitor formed above the air gap group on the insulating layer.

摘要翻译： 根据本发明的实施例，MEMS元件包括：半导体衬底; 形成在所述基板上的岛绝缘层，所述绝缘层包括具有气隙组的气隙层，所述气隙组包括沿面内方向设置的多个气隙; 以及形成在绝缘层上的气隙组上方的MEMS电容器。