公开(公告)号：US06424509B1

公开(公告)日：2002-07-23

申请号：US09551573

申请日：2000-04-18

申请人： Yoshimichi Otsuki ,  Shinichi Yamada

发明人： Yoshimichi Otsuki ,  Shinichi Yamada

IPC分类号： H02H900

CPC分类号： H01L27/0251

摘要： A semiconductor device having a protective circuit, in order to prevent from breaking internal circuits according to electrostatic forces or noises generated on an input terminal is provided. In the semiconductor, a protective diode for countermeasures is applied to the overshoot between the input terminal and a power source wiring, and a MOS transistor is provided between the power source wiring and a ground wiring. The MOS transistor operates as a gate-controlled lateral transistor and becomes conductive earlier than a large size bipolar transistor resulting in providing protection between the input terminal and the ground wiring.

摘要翻译： 提供了具有保护电路的半导体器件，以防止根据在输入端子上产生的静电力或噪声而破坏内部电路。 在半导体中，将用于对策的保护二极管应用于输入端子和电源布线之间的过冲，并且在电源布线和接地布线之间设置MOS晶体管。 MOS晶体管作为栅极控制的横向晶体管工作，比大尺寸的双极晶体管更早地导通，从而在输入端子和接地布线之间提供保护。

公开(公告)号：US5422301A

公开(公告)日：1995-06-06

申请号：US321900

申请日：1994-10-17

申请人： Yoshimichi Otsuki

发明人： Yoshimichi Otsuki

IPC分类号： H01L21/76 ,  H01L21/265 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/78

CPC分类号： H01L21/76218 ,  H01L21/823807

摘要： A method of manufacturing a semiconductor device with MOSFETs including the steps of forming an anti-oxidation film pattern over an element forming region of a semiconductor substrate, selectively oxidizing a region not covered with the anti-oxidation film pattern on the semiconductor substrate to form an isolating oxide film, and implanting impurities into the semiconductor substrate via the isolating oxide film and anti-oxidation film at a predetermined acceleration energy to form a threshold voltage control region under the anti-oxidation film and a channel stop region under the isolating oxide film. The channel stop region and threshold voltage control region can be formed by a single ion implantation process.

摘要翻译： 一种制造具有MOSFET的半导体器件的方法，包括以下步骤：在半导体衬底的元件形成区域上形成抗氧化膜图案，在半导体衬底上选择性地氧化未覆盖有抗氧化膜图案的区域，以形成 隔离氧化膜，并以预定的加速能量通过隔离氧化膜和抗氧化膜将杂质注入到半导体衬底中，以形成抗氧化膜下方的阈值电压控制区域以及隔离氧化膜下方的通道停止区域。 沟道停止区域和阈值电压控制区域可以通过单个离子注入工艺形成。