公开(公告)号：US20090057811A1

公开(公告)日：2009-03-05

申请号：US12199040

申请日：2008-08-27

申请人： Yoshio MURAKAMI ,  Kenji OKITA ,  Tomoyuki HORA

发明人： Yoshio MURAKAMI ,  Kenji OKITA ,  Tomoyuki HORA

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L21/76243 ,  H01L21/02052 ,  H01L21/31111

摘要： A SIMOX wafer manufacturing method which is capable of providing etching conditions to prevent surface defects (divots) from being spread. The method includes an oxygen implantation process and a high temperature annealing step for forming a BOX layer, a front surface oxide film etching process to treat a front surface of the wafer at an area in which oxygen is implanted, and a rear surface oxide film etching process to treat a rear surface of the wafer, and oxide film etching conditions in the front and rear oxide film etching processes are controlled differently.

摘要翻译： 一种能够提供蚀刻条件以防止表面缺陷（纹理）扩散的SIMOX晶片制造方法。 该方法包括用于形成BOX层的氧注入工艺和高温退火步骤，用于在注入氧的区域处理晶片的前表面的前表面氧化膜蚀刻工艺和背面氧化膜蚀刻 处理晶片的后表面的处理以及前后氧化膜蚀刻工艺中的氧化膜蚀刻条件被不同地控制。