公开(公告)号：US20120126361A1

公开(公告)日：2012-05-24

申请号：US13363974

申请日：2012-02-01

申请人： Yoshiro AOKI ,  Noashi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

发明人： Yoshiro AOKI ,  Noashi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

IPC分类号： H01L29/06

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

摘要翻译： 将少量的氧离子注入晶片表面层，然后进行热处理，以便在表面层中形成不完全的注入氧化膜。 因此，晶片成本降低; 防止在外延膜的表面形成凹坑; 并且防止在晶片的外周部形成滑动。

公开(公告)号：US20090321874A1

公开(公告)日：2009-12-31

申请号：US12483439

申请日：2009-06-12

申请人： Yoshiro AOKI ,  Naoshi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

发明人： Yoshiro AOKI ,  Naoshi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

摘要翻译： 将少量的氧离子注入晶片表面层，然后进行热处理，以便在表面层中形成不完全的注入氧化膜。 因此，晶片成本降低; 防止在外延膜的表面形成凹坑; 并且防止在晶片的外周部形成滑动。

公开(公告)号：US20110136267A1

公开(公告)日：2011-06-09

申请号：US12869894

申请日：2010-08-27

申请人： Etsurou MORITA ,  Akihiko ENDO ,  Yoshihisa NONOGAKI ,  Hideki NISHIHATA

发明人： Etsurou MORITA ,  Akihiko ENDO ,  Yoshihisa NONOGAKI ,  Hideki NISHIHATA

IPC分类号： H01L21/66

CPC分类号： H01L27/1469 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.

摘要翻译： 测量从其镜面加工表面延伸到固态图像感测装置的半导体晶片层的厚度。 基于剩余厚度数据，通过控制等离子体蚀刻量，从镜面加工表面进行等离子体蚀刻直到达到预定厚度。 通过这样做，可以以低成本降低固体摄像装置的厚度变化，而不会增加处理次数。

公开(公告)号：US20110084367A1

公开(公告)日：2011-04-14

申请号：US12897907

申请日：2010-10-05

申请人： Hideki NISHIHATA ,  Yoshihisa NONOGAKI ,  Akihiko ENDO

发明人： Hideki NISHIHATA ,  Yoshihisa NONOGAKI ,  Akihiko ENDO

IPC分类号： H01L23/00 ,  H01L21/762

CPC分类号： H01L21/76243

摘要： A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the whole area in the ion implanted layer; performing heat treatment of the silicon wafer after implanting boron ions, thereby forming a thinning-stopper layer including a mixture of silicon particles, silicon oxides, and boron, and forming an active layer in the silicon wafer on the surface side of the thinning-stopper layer; and forming an epitaxial layer on the surface of the silicon wafer after the heat treatment.

摘要翻译： 一种制造外延晶片的方法，包括：从硅晶片的表面注入氧离子，从而在所述硅晶片的表面层中形成离子注入层; 在形成离子注入层之后，将硼离子从硅晶片的表面注入离子注入层中的整个区域; 在硼离子注入后对硅晶片进行热处理，从而形成包含硅颗粒，氧化硅和硼的混合物的减薄 - 阻挡层，并在薄晶片表面侧的硅晶片中形成有源层 层; 以及在热处理之后在硅晶片的表面上形成外延层。

公开(公告)号：US20110089524A1

公开(公告)日：2011-04-21

申请号：US12903386

申请日：2010-10-13

申请人： Yoshihisa NONOGAKI

发明人： Yoshihisa NONOGAKI

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/26533 ,  H01L21/76256 ,  H01L27/1464 ,  H01L27/14692

摘要： A semiconductor device and a method of manufacturing the same capable of reducing variations in the thickness of a semiconductor device are provided. The amount of oxygen implanted ions is less than the amount of implanted oxygen ions in the conventional epitaxial SIMOX wafers. Oxygen is ion-implanted into the surface layer of a silicon wafer from the surface of the wafer. Then, by heat treating the wafer, a thinning stop layer, which is an imperfect buried oxide film, is formed along the entire plane of the wafer. As a result, variation of the thickness of the semiconductor device formed in an active layer can be reduced, since the, the reliability of the accuracy of the end point of silicon wafer thinning is higher than that of a thinning using the conventional deep trench structure as an end point detector.

摘要翻译： 提供了能够减少半导体器件的厚度变化的半导体器件及其制造方法。 氧注入离子的量小于常规外延SIMOX晶片中注入的氧离子的量。 从晶片的表面将氧离子注入到硅晶片的表面层中。 然后，通过对晶片进行热处理，沿着晶片的整个平面形成作为不完美的掩埋氧化膜的减薄阻挡层。 结果，可以减少形成在有源层中的半导体器件的厚度的变化，因为硅晶片薄化的终点的精度的可靠性高于使用传统的深沟槽结构的薄化的可靠性 作为终点检测器。