公开(公告)号：US10741571B2

公开(公告)日：2020-08-11

申请号：US15401486

申请日：2017-01-09

申请人： Young-Bae Yoon ,  Joong-Shik Shin ,  Kwang-Ho Kim ,  Hyun-Mog Park

发明人： Young-Bae Yoon ,  Joong-Shik Shin ,  Kwang-Ho Kim ,  Hyun-Mog Park

IPC分类号： H01L27/11565 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/11575

摘要： A vertical memory device includes a channel, gate lines, and a cutting pattern, respectively, on a substrate. The channel extends in a first direction substantially perpendicular to an upper surface of the substrate. The gate lines are spaced apart from each other in the first direction. Each of the gate lines surrounds the channel and extends in a second direction substantially parallel to the upper surface of the substrate. The cutting pattern includes a first cutting portion extending in the first direction and cutting the gate lines, and a second cutting portion crossing the first cutting portion and merged with the first cutting portion.

公开(公告)号：US08324051B2

公开(公告)日：2012-12-04

申请号：US12792508

申请日：2010-06-02

申请人： Young-Soo Song ,  Joong-Shik Shin

发明人： Young-Soo Song ,  Joong-Shik Shin

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/11519 ,  H01L29/66825

摘要： Methods of manufacturing NOR-type flash memory device include forming a tunnel oxide layer on a substrate, forming a first conductive layer on the tunnel oxide layer, forming first mask patterns parallel to one another on the first conductive layer in a y direction of the substrate, and selectively removing the first conductive layer and the tunnel oxide layer using the first mask patterns as an etch mask. Thus, first conductive patterns and tunnel oxide patterns are formed, and first trenches are formed to expose the surface of the substrate between the first conductive patterns and the tunnel oxide patterns. A photoresist pattern is formed to open at least one of the first trenches, and impurity ions are implanted using the photoresist pattern as a first ion implantation mask to form an impurity region extending in a y direction of the substrate. The photoresist pattern is removed. The substrate is annealed to diffuse the impurity region, thereby forming an impurity expansion region further expanding in an x direction of the substrate. The substrate is selectively removed using the first mask patterns as an etch mask to form second trenches corresponding to the first trenches. Isolation layers are formed to define active regions in the second trenches.

摘要翻译： 制造NOR型闪速存储器件的方法包括在衬底上形成隧道氧化物层，在隧道氧化物层上形成第一导电层，在衬底的一个方向上在第一导电层上形成彼此平行的第一掩模图案， 以及使用第一掩模图案作为蚀刻掩模来选择性地去除第一导电层和隧道氧化物层。 因此，形成第一导电图案和隧道氧化物图案，并且形成第一沟槽以暴露第一导电图案和隧道氧化物图案之间的衬底表面。 形成光致抗蚀剂图形以打开第一沟槽中的至少一个，并且使用光致抗蚀剂图案作为第一离子注入掩模注入杂质离子，以形成沿衬底的y方向延伸的杂质区域。 去除光致抗蚀剂图案。 将衬底退火以扩散杂质区域，从而形成在衬底的x方向上进一步扩大的杂质扩展区域。 使用第一掩模图案作为蚀刻掩模来选择性地去除衬底，以形成对应于第一沟槽的第二沟槽。 形成隔离层以限定第二沟槽中的有源区。

公开(公告)号：US20110177661A1

公开(公告)日：2011-07-21

申请号：US12792508

申请日：2010-06-02

申请人： Young-Soo Song ,  Joong-Shik Shin

发明人： Young-Soo Song ,  Joong-Shik Shin

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/11519 ,  H01L29/66825

摘要： Methods of manufacturing NOR-type flash memory device include forming a tunnel oxide layer on a substrate, forming a first conductive layer on the tunnel oxide layer, forming first mask patterns parallel to one another on the first conductive layer in a y direction of the substrate, and selectively removing the first conductive layer and the tunnel oxide layer using the first mask patterns as an etch mask. Thus, first conductive patterns and tunnel oxide patterns are formed, and first trenches are formed to expose the surface of the substrate between the first conductive patterns and the tunnel oxide patterns. A photoresist pattern is formed to open at least one of the first trenches, and impurity ions are implanted using the photoresist pattern as a first ion implantation mask to form an impurity region extending in a y direction of the substrate. The photoresist pattern is removed. The substrate is annealed to diffuse the impurity region, thereby forming an impurity expansion region further expanding in an x direction of the substrate. The substrate is selectively removed using the first mask patterns as an etch mask to form second trenches corresponding to the first trenches. Isolation layers are formed to define active regions in the second trenches.

摘要翻译： 制造NOR型闪速存储器件的方法包括在衬底上形成隧道氧化物层，在隧道氧化物层上形成第一导电层，在衬底的一个方向上在第一导电层上形成彼此平行的第一掩模图案， 以及使用第一掩模图案作为蚀刻掩模来选择性地去除第一导电层和隧道氧化物层。 因此，形成第一导电图案和隧道氧化物图案，并且形成第一沟槽以暴露第一导电图案和隧道氧化物图案之间的衬底表面。 形成光致抗蚀剂图形以打开第一沟槽中的至少一个，并且使用光致抗蚀剂图案作为第一离子注入掩模注入杂质离子，以形成沿衬底的y方向延伸的杂质区域。 去除光致抗蚀剂图案。 将衬底退火以扩散杂质区域，从而形成在衬底的x方向上进一步扩大的杂质扩展区域。 使用第一掩模图案作为蚀刻掩模来选择性地去除衬底，以形成对应于第一沟槽的第二沟槽。 形成隔离层以限定第二沟槽中的有源区。