公开(公告)号：US6151255A

公开(公告)日：2000-11-21

申请号：US342619

申请日：1999-06-29

申请人： Young-Dong Joo ,  Tae-Hum Yang

发明人： Young-Dong Joo ,  Tae-Hum Yang

IPC分类号： G11C16/02 ,  G11C16/12 ,  G11C16/16 ,  G11C16/04

CPC分类号： G11C16/12 ,  G11C16/16

摘要： A flash memory which is electrically erasable programmable and has a negative voltage generator for data erasure. The negative voltage generator comprises a charge pump for pumping a negative charge, a regulator for regulating the level of an output voltage from the charge pump according to the level of a supply voltage, and a negative voltage supply for supplying a voltage of the level regulated by the regulator to a gate of a memory cell transistor. This construction of the negative voltage generator enables a data erase operation of the flash memory to be performed under the condition that an output voltage from the negative voltage supply is applied to the gate of the cell transistor, the supply voltage is applied to a source of the cell transistor and a drain of the cell transistor floats. Further, a sufficient amount of erase current is secured by the voltages applied to the source and gate of the cell transistor for the data erase operation. Moreover, the negative voltage generator compensates for a variation in the supply voltage suffered by the source side. Therefore, the flash memory of the present invention is capable of performing a stable data erase operation.

摘要翻译： 闪存，可电可擦除可编程，并具有用于数据擦除的负电压发生器。 负电压发生器包括用于泵送负电荷的电荷泵，用于根据电源电压的电平调节来自电荷泵的输出电压的电平的调节器，以及用于提供电平调节的电压的负电压源 通过调节器到存储单元晶体管的栅极。 负电压发生器的这种结构使得能够在来自负电压源的输出电压被施加到单元晶体管的栅极的条件下执行闪速存储器的数据擦除操作，电源电压被施加到 单元晶体管和单元晶体管的漏极浮动。 此外，通过施加到用于数据擦除操作的单元晶体管的源极和栅极的电压来确保足够量的擦除电流。 此外，负电压发生器补偿源侧遭受的电源电压的变化。 因此，本发明的闪速存储器能够执行稳定的数据擦除操作。