公开(公告)号：US20080237597A1

公开(公告)日：2008-10-02

申请号：US12043615

申请日：2008-03-06

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L31/036

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

摘要翻译： TFT阵列面板包括：彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二漏极构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极，半导体，源极和漏极部件形成第一TFT，第二栅极，半导体，源极和漏极部件形成第二TFT。

公开(公告)号：US07358124B2

公开(公告)日：2008-04-15

申请号：US11516187

申请日：2006-09-06

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

摘要翻译： TFT阵列面板包括：彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二漏极构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极，半导体，源极和漏极部件形成第一TFT，第二栅极，半导体，源极和漏极部件形成第二TFT。

公开(公告)号：US07288790B2

公开(公告)日：2007-10-30

申请号：US11612055

申请日：2006-12-18

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

摘要翻译： TFT阵列面板包括：彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二漏极构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极，半导体，源极和漏极部件形成第一TFT，第二栅极，半导体，源极和漏极部件形成第二TFT。

公开(公告)号：US07884365B2

公开(公告)日：2011-02-08

申请号：US12043615

申请日：2008-03-06

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

摘要翻译： TFT阵列面板包括：彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二排出构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极，半导体，源极和漏极部件形成第一TFT，第二栅极，半导体，源极和漏极部件形成第二TFT。

公开(公告)号：US20070004103A1

公开(公告)日：2007-01-04

申请号：US11516187

申请日：2006-09-06

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

公开(公告)号：US20070090367A1

公开(公告)日：2007-04-26

申请号：US11612055

申请日：2006-12-18

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

摘要翻译： TFT阵列面板包括：彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二漏极构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极，半导体，源极和漏极部件形成第一TFT，第二栅极，半导体，源极和漏极部件形成第二TFT。

公开(公告)号：US07138655B2

公开(公告)日：2006-11-21

申请号：US10718309

申请日：2003-11-20

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Joo-Ae Youn ,  Dong-Gyu Kim

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/78696

摘要： A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

摘要翻译： TFT阵列面板包括：彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二漏极构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极，半导体，源极和漏极部件形成第一TFT，第二栅极，半导体，源极和漏极部件形成第二TFT。

公开(公告)号：US20070008475A1

公开(公告)日：2007-01-11

申请号：US11523302

申请日：2006-09-19

申请人： Young-Mi Tak ,  Ae Shin ,  Dong-Gyu Kim ,  Seung-Soo Baek

发明人： Young-Mi Tak ,  Ae Shin ,  Dong-Gyu Kim ,  Seung-Soo Baek

IPC分类号： G02F1/1343

CPC分类号： G02F1/133707 ,  G02F1/134336 ,  G02F1/1393

摘要： A liquid crystal display is provided, which includes: a first substrate; a first signal line formed on the first substrate; a second signal line formed on the first substrate and intersecting the first signal line; a pixel electrode including a plurality of partitions; a thin film transistor connected to the gate line, the data line, and the pixel electrode; a second substrate facing the second substrate; a common electrode formed on the second substrate and having an opening facing the first or the second signal line; and first and second domain defining members that define a plurality of domains in the liquid crystal display and are dispose on the first and the second substrates, respectively, the second domain defining member disposed on the second substrate and separated from the opening.

摘要翻译： 提供一种液晶显示器，其包括：第一基板; 形成在第一基板上的第一信号线; 形成在所述第一基板上并与所述第一信号线相交的第二信号线; 包括多个分隔件的像素电极; 连接到栅极线，数据线和像素电极的薄膜晶体管; 面向所述第二基板的第二基板; 形成在第二基板上并具有面向第一或第二信号线的开口的公共电极; 以及限定液晶显示器中的多个畴并分别设置在第一和第二基板上的第一和第二域定义构件，第二区限定构件分别设置在第二基板上并与开口分离。

公开(公告)号：US07342633B2

公开(公告)日：2008-03-11

申请号：US10877673

申请日：2004-06-25

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Dong-Gyu Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/133707 ,  G02F1/134336 ,  G02F1/1393 ,  G02F2001/136222

摘要： A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second lines formed on the substrate, intersecting the first signal line, and including a plurality of curved portions having at least two curve points and a plurality of intermediate portions, the curved portions and the intermediate portions alternately connected; a plurality of pixel electrodes located substantially in areas defined by the first and the second signal lines; and a plurality of thin film transistors connected to the first and the second signal lines and the pixel electrodes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：基板; 形成在所述基板上的多个第一信号线; 多个第二线形成在所述基板上，与所述第一信号线相交，并且包括具有至少两个弯曲点和多个中间部分的多个弯曲部分，所述弯曲部分和所述中间部分交替连接; 基本上位于由第一和第二信号线限定的区域中的多个像素电极; 以及连接到第一和第二信号线和像素电极的多个薄膜晶体管。

公开(公告)号：US20080117150A1

公开(公告)日：2008-05-22

申请号：US12020204

申请日：2008-01-25

申请人： Young-Mi Tak ,  Seung-Soo Baek ,  Dong-Gyu Kim

发明人： Young-Mi Tak ,  Seung-Soo Baek ,  Dong-Gyu Kim

IPC分类号： G09G3/36

CPC分类号： G02F1/133707 ,  G02F1/134336 ,  G02F1/1393 ,  G02F2001/136222

摘要： A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second lines formed on the substrate, intersecting the first signal line, and including a plurality of curved portions having at least two curve points and a plurality of intermediate portions, the curved portions and the intermediate portions alternately connected; a plurality of pixel electrodes located substantially in areas defined by the first and the second signal lines; and a plurality of thin film transistors connected to the first and the second signal lines and the pixel electrodes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：基板; 形成在所述基板上的多个第一信号线; 多个第二线形成在所述基板上，与所述第一信号线相交，并且包括具有至少两个弯曲点和多个中间部分的多个弯曲部分，所述弯曲部分和所述中间部分交替连接; 基本上位于由第一和第二信号线限定的区域中的多个像素电极; 以及连接到第一和第二信号线和像素电极的多个薄膜晶体管。