公开(公告)号：US06328043B1

公开(公告)日：2001-12-11

申请号：US09315340

申请日：1999-05-20

申请人： Young-Roe Kim ,  Hyun-Young Kim ,  Hyun-kuk Ko ,  Kyung-Burn Koo ,  Ju-Wan Kim ,  Hyong-Soo Kim ,  Dong-chan Park ,  Dong-Geun Na

发明人： Young-Roe Kim ,  Hyun-Young Kim ,  Hyun-kuk Ko ,  Kyung-Burn Koo ,  Ju-Wan Kim ,  Hyong-Soo Kim ,  Dong-chan Park ,  Dong-Geun Na

IPC分类号： B08B500

CPC分类号： C23C16/4408 ,  C23C16/42 ,  C23C16/4405 ,  Y10S438/905

摘要： A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH4 as silicon source gas and NF3 as cleaning gas, includes purging a carrier gas line for an SiH4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process.

摘要翻译： 提供了一种用于除去微粒污染物的方法和装置，以确保在硅化钨沉积工艺期间的高纯度。 使用SiH4作为硅源气体和NF 3作为清洁气体的去除硅化钨沉积工艺中的微粒污染物的方法包括：在载气中除去用于SiH 4硅源气体的载气管线以除去腔室和载气管线中的污染物 供给室，并且将NF 3清洁气体供应到室以形成等离子体。 在等离子体清洗之后，吹扫响应于SiH 4的气体管线流动的反应气体以除去腔室和反应气体管线中的污染物。 结果，任何颗粒污染物被去除或保持在对硅化钨沉积过程没有影响的最低水平。