公开(公告)号：US06815350B2

公开(公告)日：2004-11-09

申请号：US10378681

申请日：2003-03-05

申请人： Young-Seok Kim ,  Yong-Woo Hyung ,  Man-Sung Kang ,  Jae-Young Ahn

发明人： Young-Seok Kim ,  Yong-Woo Hyung ,  Man-Sung Kang ,  Jae-Young Ahn

IPC分类号： H01L2131

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/3211

摘要： A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.