公开(公告)号：US20230271032A1

公开(公告)日：2023-08-31

申请号：US17681190

申请日：2022-02-25

Applicant: Yu-Jen WANG

Inventor： Feipei LAI ,  Jason Chia-Hsien CHENG ,  Yu-Jen WANG ,  Wei-Jen CHEN

IPC: A61N5/10 ,  G16H30/40 ,  G16H30/20

CPC classification number: A61N5/1067 ,  A61N5/1031 ,  G16H30/20 ,  G16H30/40

Abstract: A newly developed algorithm and software can effectively and accurately predict the collisions for the accelerator, phantom, and patient setups, and can help physicians to choose the noncolliding and optimized beam sets efficiently via offering the ideal hits of planning target volume (PTV) and constraints of organ at risks (OARs).

公开(公告)号：US20130244342A1

公开(公告)日：2013-09-19

申请号：US13419507

申请日：2012-03-14

Applicant: Yu-Jen WANG ,  Yuan-Tung CHIN

Inventor： Yu-Jen WANG ,  Yuan-Tung CHIN

IPC: H01L21/8246

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: A magnetic tunnel junction (MTJ) structure is provided over a device wherein the MTJ comprises a tunnel barrier layer between a free layer and a pinned layer; and a top and bottom electrode inside the MTJ structure. A hard mask layer is formed on the top electrode. The hard mask layer, top electrode, free layer, tunnel barrier layer, and pinned layer are patterned to define the magnetic tunnel junction (MTJ) structures. A first dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. Thereafter, the top electrode and free layer are patterned. A second dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. A third dielectric layer is deposited over the MTJ structures and a metal line contact is formed through the third dielectric layer to the top electrode to complete fabrication of the magnetic device.

Abstract translation: 在一个器件上提供一个磁性隧道结（MTJ）结构，其中MTJ包括在自由层和钉扎层之间的隧道势垒层; 以及MTJ结构内的顶部和底部电极。 在顶部电极上形成硬掩模层。 将硬掩模层，顶电极，自由层，隧道势垒层和钉扎层图案化以限定磁隧道结（MTJ）结构。 第一电介质层沉积在MTJ结构上并且被平坦化以暴露顶部电极。 此后，对顶部电极和自由层进行图案化。 第二电介质层沉积在MTJ结构上并且被平坦化以暴露顶部电极。 在MTJ结构上沉积第三电介质层，并且通过第三电介质层形成金属线接触到顶部电极以完成磁性器件的制造。

公开(公告)号：US20110001201A1

公开(公告)日：2011-01-06

申请号：US12828593

申请日：2010-07-01

Applicant: Yu-Jen WANG ,  Ya-Chen KAO ,  Chun-Jung LIN

Inventor： Yu-Jen WANG ,  Ya-Chen KAO ,  Chun-Jung LIN

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 Å to 400 Å. The MTJ cell structure can have a top conducting layer over the sacrifice layer.

Abstract translation: 磁隧道结（MTJ）蚀刻工艺使用牺牲层。 MTJ单元结构包括在第一磁性层和第二磁性层之间的具有第一磁性层，第二磁性层和隧道势垒层的MTJ堆叠以及与第二磁性层相邻的牺牲层，其中牺牲 层在灰化过程中保护MTJ堆叠中的第二磁性层免受氧化。 牺牲层不会增加MTJ堆叠的电阻。 牺牲层可以由Mg，Cr，V，Mn，Ti，Zr，Zn或其任何合金组合或任何其它合适的材料制成。 牺牲层可以是多层的和/或具有从5到400的厚度。 MTJ单元结构可以在牺牲层上方具有顶部导电层。