公开(公告)号：US07071007B2

公开(公告)日：2006-07-04

申请号：US10313776

申请日：2002-12-06

申请人： Yuan-Chieh Tseng ,  Chao-Hsiung Wang ,  Tai-Bor Wu

发明人： Yuan-Chieh Tseng ,  Chao-Hsiung Wang ,  Tai-Bor Wu

IPC分类号： H01L21/00

CPC分类号： H01L28/55

摘要： A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode, annealing the dielectric layer, wherein a nanocomposite layer is formed including nanoparticles of platinum and forming a top electrode over the dielectric layer. An integrated circuit is also provided including a ferroelectric capacitor. The capacitor includes a bottom electrode formed over a substrate and a ferroelectric and platinum thin film nanocomposite dielectric layer formed over the bottom electrode, wherein the nanocomposite layer includes nanoparticles of platinum. A top electrode is formed over the dielectric layer.

摘要翻译： 形成低电压驱动薄膜铁电电容器的方法包括以下步骤：在底部电极上沉​​积铁电和铂薄膜电介质层，对电介质层进行退火，其中形成纳米复合材料层，包括铂纳米颗粒并形成顶部 电极在电介质层上。 还提供了包括铁电电容器的集成电路。 电容器包括形成在衬底上的底部电极和形成在底部电极上的铁电和铂薄膜纳米复合电介质层，其中纳米复合层包括铂纳米颗粒。 在电介质层上形成顶部电极。

公开(公告)号：US20060038214A1

公开(公告)日：2006-02-23

申请号：US11253178

申请日：2005-10-18

申请人： Yuan-Chieh Tseng ,  Chao-Hsiung Wang ,  Tai-Bor Wu

发明人： Yuan-Chieh Tseng ,  Chao-Hsiung Wang ,  Tai-Bor Wu

IPC分类号： H01L29/00

CPC分类号： H01L28/55

摘要： A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode, annealing the dielectric layer, wherein a nanocomposite layer is formed including nanoparticles of platinum and forming a top electrode over the dielectric layer. An integrated circuit is also provided including a ferroelectric capacitor. The capacitor includes a bottom electrode formed over a substrate and a ferroelectric and platinum thin film nanocomposite dielectric layer formed over the bottom electrode, wherein the nanocomposite layer includes nanoparticles of platinum. A top electrode is formed over the dielectric layer.

摘要翻译： 形成低电压驱动薄膜铁电电容器的方法包括以下步骤：在底部电极上沉​​积铁电和铂薄膜电介质层，对电介质层进行退火，其中形成纳米复合材料层，包括铂纳米颗粒并形成顶部 电极在电介质层上。 还提供了包括铁电电容器的集成电路。 电容器包括形成在衬底上的底部电极和形成在底部电极上的铁电和铂薄膜纳米复合电介质层，其中纳米复合层包括铂纳米颗粒。 在电介质层上形成顶部电极。

公开(公告)号：US20130009143A1

公开(公告)日：2013-01-10

申请号：US13253656

申请日：2011-10-05

申请人： Chih Chen ,  Chien-Min Liu ,  Yuan-Chieh Tseng

发明人： Chih Chen ,  Chien-Min Liu ,  Yuan-Chieh Tseng

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/035227 ,  H01L31/108

摘要： A photo sensor and a method of fabricating the same are disclosed, the photo sensor of the present invention has ultra-high Schottky junction area per unit volume, and the photo sensor comprises: a first conductive layer; plural metallic nanowires, in which one end of each metallic nanowire connects with the first conductive layer and is covered with a semiconductive layer having a width of 1 nm to 20 nm; and a second conductive layer locating opposite to the first conductive layer, whereby the plural metallic nanowires locate between the first conductive layer and the second conductive layer, and the semiconductive layer contacts with the second conductive layer, wherein the photo sensor of the present invention is used to detect ultra violet (UV) light with a wavelength of 10 nm-400 nm.

摘要翻译： 公开了一种光传感器及其制造方法，本发明的光传感器具有每单位体积的超高肖特基结面积，光传感器包括：第一导电层; 多个金属纳米线，其中每个金属纳米线的一端与第一导电层连接并且被宽度为1nm至20nm的半导体层覆盖; 以及与所述第一导电层相对定位的第二导电层，由此所述多个金属纳米线位于所述第一导电层和所述第二导电层之间，并且所述半导体层与所述第二导电层接触，其中本发明的光电传感器为 用于检测波长为10nm-400nm的紫外（UV）光。