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6 条记录 (耗时 0.024 秒)

    Game device
    2.
    发明授权
    Game device 失效
    游戏设备

    公开(公告)号：US5931465A

    公开(公告)日：1999-08-03

    申请号：US945686

    申请日：1998-03-05

    申请人： Junji Miyake ,  Shinji Watanabe ,  Tomohiro Matsunaga ,  Hiroyasu Suzuki ,  Masahito Yanase ,  Shigetoshi Mizuno

    发明人： Junji Miyake ,  Shinji Watanabe ,  Tomohiro Matsunaga ,  Hiroyasu Suzuki ,  Masahito Yanase ,  Shigetoshi Mizuno

    IPC分类号： A63F7/07 ,  A63F7/22 ,  A63F7/34 ,  A63F7/06

    CPC分类号： A63F7/3603 ,  A63F2007/345

    摘要： The present invention is embodied in a game device for playing a game in which a moving body is levitated above a play field board by air emitted from a number of holes formed in the play field board. A moving body feeding device automatically feeds the moving body onto the play field board. After use, the moving body is recovered, lifted above the play field board, and dropped into guides which guide the moving body onto the play field board.

    摘要翻译： PCT No.PCT / JP97 / 00660 Sec。 371日期：1998年3月5日 102（e）1998年3月5日PCT 1997年3月4日PCT PCT。 公开号WO97 / 32640 日期：1997年9月12日本发明体现在游戏装置中，游戏装置利用从游戏场板中形成的多个孔排出的空气，在游戏场板上浮动移动体。 移动身体喂养装置将移动体自动馈送到游戏场地板上。 使用后，移动体被回收，提升到游戏板上方，并落入将移动体引导到游戏板上的引导件中。

    Semiconductor device with polysilicon fuse and method for trimming the same
    4.
    发明申请
    Semiconductor device with polysilicon fuse and method for trimming the same 审中-公开
    具有多晶硅保险丝的半导体器件及其修整方法

    公开(公告)号：US20050077594A1

    公开(公告)日：2005-04-14

    申请号：US10958286

    申请日：2004-10-06

    申请人： Tomohiro Matsunaga ,  Hiroshi Mogami

    发明人： Tomohiro Matsunaga ,  Hiroshi Mogami

    IPC分类号： H01L21/768 ,  H01L21/82 ,  H01L23/525 ,  H01L23/62

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a polysilicon fuse with a fusion portion and has a sequential stack made of an interlayer insulating film having a recess above the fusion portion, a surface passivation film having an opening on the recess, a buffer film filling the recess and the opening, and a sealing resin layer. The buffer film releases film stress on the polysilicon fuse placed by the sealing resin layer, and avoids influences of the film stress on trimming of the device. In a method for trimming a semiconductor device, trimming is carried out by applying to the polysilicon fuse a voltage pulse capable of melting the polysilicon fuse at the fusion portion and interrupting the applied voltage with a current flowing through the fuse. This avoids influences of film stress placed by the sealing resin.

    摘要翻译： 半导体器件包括具有熔接部分的多晶硅熔丝，并且具有由在熔融部分上方具有凹陷的层间绝缘膜制成的顺序堆叠，在凹部上具有开口的表面钝化膜，填充凹部的缓冲膜和开口 ，和密封树脂层。 缓冲膜释放由密封树脂层放置的多晶硅熔丝上的膜应力，并避免膜应力对器件修整的影响。 在微调半导体器件的方法中，通过向多晶硅熔丝施加能够熔化融合部分的多晶硅熔丝的电压脉冲并且以流过熔丝的电流中断施加的电压来进行修整。 这避免了由密封树脂放置的薄膜应力的影响。

    Fuse and write method for fuse
    6.
    发明申请
    Fuse and write method for fuse 审中-公开
    保险丝的保险丝和写入方法

    公开(公告)号：US20050274966A1

    公开(公告)日：2005-12-15

    申请号：US11117330

    申请日：2005-04-29

    申请人： Tomohiro Matsunaga

    发明人： Tomohiro Matsunaga

    IPC分类号： G11C17/18 ,  H01L21/82 ,  H01L23/525 ,  H01L27/10 ,  H01L33/00

    CPC分类号： G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A polysilicon fuse includes a fusing part to be fused through voltage application, a positive terminal side joint connected to one end of the fusing part and a negative terminal side joint connected to the other end of the fusing part. The positive terminal side joint that attains a high voltage through the voltage application has lower resistance and higher heat conductivity than the negative terminal side joint. Furthermore, a write operation is performed, with a current limiting resistance serially connected to a positive terminal side joint of a polysilicon fuse, by applying a voltage pulse to the polysilicon fuse through the current limiting resistance. Thus, a current flowing to the polysilicon fuse in fusing the fusing part is limited to a given range.

    摘要翻译： 多晶硅保险丝包括通过施加电压熔断的熔接部，与端子的一端连接的正端子侧接头和与定影部的另一端连接的负端子侧接头。 通过施加电压而获得高电压的正极端子侧接头比负极侧接头具有更低的电阻和更高的导热率。 此外，通过通过限流电阻向多晶硅熔丝施加电压脉冲，执行写入操作，其中限流电阻串联连接到多晶硅熔丝的正极端子侧接头。 因此，流入熔融部件的多晶硅保险丝的电流被限制在给定的范围内。