公开(公告)号：US08932954B2

公开(公告)日：2015-01-13

申请号：US13593563

申请日：2012-08-24

申请人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

发明人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

IPC分类号： H01L21/311 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L22/12

摘要： According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

摘要翻译： 根据一个实施例，杂质分析方法包括对形成在基板上的含硅膜进行气相分解，在气相分解后的第一温度下加热基板，在高于第一温度的第二温度下加热基板 在第一温度下加热后，除去沉积在含硅膜表面上的硅化合物，在第二温度下加热后将回收溶液滴加到基板表面上并移动基板表面，以将金属回收到回收溶液中 ，并干燥回收溶液，对干标记进行X射线荧光光谱法。

公开(公告)号：US20130244349A1

公开(公告)日：2013-09-19

申请号：US13593563

申请日：2012-08-24

申请人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

发明人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

IPC分类号： H01L21/66 ,  C23C16/46

CPC分类号： H01L22/12

摘要： According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

摘要翻译： 根据一个实施例，杂质分析方法包括对形成在基板上的含硅膜进行气相分解，在气相分解后的第一温度下加热基板，在高于第一温度的第二温度下加热基板 在第一温度下加热后，除去沉积在含硅膜表面上的硅化合物，在第二温度下加热后将回收溶液滴加到基板表面上并移动基板表面，以将金属回收到回收溶液中 ，并干燥回收溶液，对干标记进行X射线荧光光谱法。