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    Method of manufacturing chemical mechanical polishing pad
    1.
    发明授权
    Method of manufacturing chemical mechanical polishing pad 有权
    化学机械抛光垫的制造方法

    公开(公告)号：US07329174B2

    公开(公告)日：2008-02-12

    申请号：US11521547

    申请日：2006-09-15

    申请人： Yukio Hosaka ,  Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    发明人： Yukio Hosaka ,  Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    IPC分类号： B24D11/00

    CPC分类号： B24D13/147 ,  B24B19/028 ,  B24D18/0009

    摘要： The present invention relates to a method of manufacturing a chemical mechanical polishing pad which provides a chemical mechanical polishing pad which fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate.The method comprising either one of a group of steps (A) and a group of steps (B), the group of steps (A) including (A1) the step of preparing a composition for forming a chemical mechanical polishing pad; (A2) the step of molding the composition for forming a chemical mechanical polishing pad into a pad-like form; (A3) the step of mounting the pad-like form on the round table of a cutting machine having at least a milling unit equipped with a milling cutter, a drive unit capable of angle indexing and positioning and a round table journaled by the drive unit; (A4) the step of forming the second group of grooves with the milling cutter; and (A5) the step of forming the first group of grooves, and the group of steps (B) including (B1) the step of preparing a composition for forming a chemical mechanical polishing pad; (B2) the step of molding the composition for forming a chemical mechanical polishing pad into a pad-like form having the second group of grooves by using a metal mold having projections corresponding to the shapes of the second group of grooves; and (B3) the step of forming the first group of grooves.

    摘要翻译： 本发明涉及一种提供化学机械抛光垫的化学机械抛光垫的制造方法，该化学机械抛光垫完全抑制在抛光表面上产生划痕并具有优异的抛光速率。 该方法包括一组步骤（A）和一组步骤（B）中的任一个，步骤（A）组包括（A1）制备用于形成化学机械抛光垫的组合物的步骤; （A2）将用于形成化学机械抛光垫的组合物成型为垫状的步骤; （A3）将垫状形状安装在具有至少铣削单元的切割机的圆台上的步骤，所述铣削单元配备有铣刀，能够进行角度分度和定位的驱动单元以及由驱动单元 ; （A4）利用铣刀形成第二组槽的步骤; 和（A5）形成第一组槽的步骤，以及包括（B1）制备用于形成化学机械抛光垫的组合物的步骤的步骤（B）的组; （B2）通过使用具有对应于第二组槽的形状的突起的金属模具将用于形成化学机械抛光垫的组合物模塑成具有第二组槽的垫状形状的步骤; 和（B3）形成第一组槽的步骤。

    Chemical mechanical polishing pad and chemical mechanical polishing method
    2.
    发明申请
    Chemical mechanical polishing pad and chemical mechanical polishing method 审中-公开
    化学机械抛光垫和化学机械抛光方法

    公开(公告)号：US20050260929A1

    公开(公告)日：2005-11-24

    申请号：US11132365

    申请日：2005-05-19

    申请人： Hiroshi Shiho ,  Hiroyuki Tano ,  Yukio Hosaka ,  Hideki Nishimura

    发明人： Hiroshi Shiho ,  Hiroyuki Tano ,  Yukio Hosaka ,  Hideki Nishimura

    IPC分类号： B24B37/04 ,  B24D13/14 ,  B24B1/00

    CPC分类号： B24B37/26

    摘要： A chemical mechanical polishing pad having a polishing surface, a non-polishing surface opposite to the polishing surface and a side surface for defining these surfaces, the polishing surface having (i) a first group of grooves which intersect a single virtual straight line extending from the center toward the peripheral portion of the polishing surface and do not cross one another, or a single first spiral groove which expands gradually from the center portion toward the peripheral portion of the polishing surface, and (ii) a second group of grooves which extend from the center portion toward the peripheral portion of the polishing surface, intersect the first group of grooves or the first spiral groove and do not cross one another. Since this chemical mechanical polishing pad fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate, it is advantageously used in a chemical mechanical polishing method.

    摘要翻译： 一种化学机械抛光垫，其具有抛光表面，与抛光表面相对的非抛光表面和用于限定这些表面的侧表面，所述抛光表面具有（i）第一组沟槽，其与从 所述中心朝向所述研磨面的周边部并且不会彼此交叉，或者从所述研磨面的中心部朝向所述周边部逐渐扩展的单个第一螺旋槽，以及（ii）延伸的所述第二组槽 从中心部朝向研磨面的周边部分，与第一组槽或第一螺旋槽相交，并且不会彼此交叉。 由于该化学机械抛光垫完全抑制在研磨表面上产生划痕并且具有优异的抛光速率，因此有利地用于化学机械抛光方法中。

    Method of manufacturing chemical mechanical polishing pad
    3.
    发明申请
    Method of manufacturing chemical mechanical polishing pad 有权
    化学机械抛光垫的制造方法

    公开(公告)号：US20070082587A1

    公开(公告)日：2007-04-12

    申请号：US11521547

    申请日：2006-09-15

    申请人： Yukio Hosaka ,  Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    发明人： Yukio Hosaka ,  Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    IPC分类号： B24B1/00

    CPC分类号： B24D13/147 ,  B24B19/028 ,  B24D18/0009

    摘要： The present invention relates to a method of manufacturing a chemical mechanical polishing pad which provides a chemical mechanical polishing pad which fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate. The method comprising either one of a group of steps (A) and a group of steps (B), the group of steps (A) including (A1) the step of preparing a composition for forming a chemical mechanical polishing pad; (A2) the step of molding the composition for forming a chemical mechanical polishing pad into a pad-like form; (A3) the step of mounting the pad-like form on the round table of a cutting machine having at least a milling unit equipped with a milling cutter, a drive unit capable of angle indexing and positioning and a round table journaled by the drive unit; (A4) the step of forming the second group of grooves with the milling cutter; and (A5) the step of forming the first group of grooves, and the group of steps (B) including (B1) the step of preparing a composition for forming a chemical mechanical polishing pad; (B2) the step of molding the composition for forming a chemical mechanical polishing pad into a pad-like form having the second group of grooves by using a metal mold having projections corresponding to the shapes of the second group of grooves; and (B3) the step of forming the first group of grooves.

    摘要翻译： 本发明涉及一种提供化学机械抛光垫的化学机械抛光垫的制造方法，该化学机械抛光垫完全抑制在抛光表面上产生划痕并具有优异的抛光速率。 该方法包括一组步骤（A）和一组步骤（B）中的任一个，步骤（A）组包括（A1）制备用于形成化学机械抛光垫的组合物的步骤; （A2）将用于形成化学机械抛光垫的组合物成型为垫状的步骤; （A3）将垫状形状安装在具有至少铣削单元的切割机的圆台上的步骤，所述铣削单元配备有铣刀，能够进行角度分度和定位的驱动单元以及由驱动单元 ; （A4）利用铣刀形成第二组槽的步骤; 和（A5）形成第一组槽的步骤，以及包括（B1）制备用于形成化学机械抛光垫的组合物的步骤的步骤（B）的组; （B2）通过使用具有对应于第二组槽的形状的突起的金属模具将用于形成化学机械抛光垫的组合物模塑成具有第二组槽的垫状形状的步骤; 和（B3）形成第一组槽的步骤。

    Chemical mechanical polishing pad and chemical mechanical polishing process
    4.
    发明授权
    Chemical mechanical polishing pad and chemical mechanical polishing process 有权
    化学机械抛光垫和化学机械抛光工艺

    公开(公告)号：US07354527B2

    公开(公告)日：2008-04-08

    申请号：US11219843

    申请日：2005-09-07

    申请人： Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    发明人： Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    IPC分类号： B44C1/22

    CPC分类号： B24B37/24

    摘要： A chemical mechanical polishing pad which has a storage elastic modulus E′(30° C.) at 30° C. of 120 MPa or less and an (E′(30° C.)/E′(60° C.)) ratio of the storage elastic modulus E′(30° C.) at 30° C. to the storage elastic modulus E′(60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

    摘要翻译： 在30℃下的储能弹性模量E'（30℃）为120MPa以下，（E'（30℃）/ E'（60℃））的化学机械研磨垫） 当研磨基材的储存弹性模量为60℃时，30℃下的储能弹性模量E'（30℃）与60℃下的储能弹性模量E'（60℃）的比为2.5以上 在以下条件下测量30℃和60℃：初始负荷：最大偏压100g：0.01％频率：0.2Hz。 化学机械抛光工艺利用上述化学机械抛光垫。 化学机械抛光垫可以在化学机械抛光步骤中抑制抛光表面产生划痕，并可提供高质量的抛光表面，化学机械抛光工艺通过使用化学机械 抛光垫

    Chemical mechanical polishing pad and chemical mechanical polishing process
    5.
    发明申请
    Chemical mechanical polishing pad and chemical mechanical polishing process 有权
    化学机械抛光垫和化学机械抛光工艺

    公开(公告)号：US20060060569A1

    公开(公告)日：2006-03-23

    申请号：US11219843

    申请日：2005-09-07

    申请人： Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    发明人： Hiroyuki Tano ,  Hideki Nishimura ,  Hiroshi Shiho

    IPC分类号： C03C15/00

    CPC分类号： B24B37/24

    摘要： A chemical mechanical polishing pad which has a storage elastic modulus E′ (30° C.) at 30° C. of 120 MPa or less and an (E′ (30° C.)/E′ (60° C.)) ratio of the storage elastic modulus E′ (30° C.) at 30° C. to the storage elastic modulus E′ (60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

    摘要翻译： 在30℃下的储能弹性模量E'（30℃）为120MPa以下，（E'（30℃）/ E'（60℃））的化学机械研磨垫） 当研磨基材的储存弹性模量为60℃时，30℃下的储能弹性模量E'（30℃）与60℃下的储能弹性模量E'（60℃）的比为2.5以上 在以下条件下测量30℃和60℃：初始负荷：最大偏压100g：0.01％频率：0.2Hz。 化学机械抛光工艺利用上述化学机械抛光垫。 化学机械抛光垫可以在化学机械抛光步骤中抑制抛光表面产生划痕，并可提供高质量的抛光表面，化学机械抛光工艺通过使用化学机械 抛光垫