Colloidal silica for semiconductor wafer polishing and production method thereof
    2.
    发明申请
    Colloidal silica for semiconductor wafer polishing and production method thereof 审中-公开
    用于半导体晶片抛光的胶体二氧化硅及其制造方法

    公开(公告)号:US20090267021A1

    公开(公告)日:2009-10-29

    申请号:US12384905

    申请日:2009-04-10

    IPC分类号: C09K13/00

    CPC分类号: C09K3/1463

    摘要: Colloidal silica forming nonspherical particles cluster, whose long axis/short axis ratio of silica particles is of 1.2 to 20, and average long axis/short axis ratio of 3 to 15. This colloidal silica can be produced by forming particles by adding basic nitrogen compounds to an active silicic acid aqueous solution, the solution which produced by hydrolysis of tetraalkoxysilane, while heating, then growing particles by using a build up method.

    摘要翻译: 胶体二氧化硅形成非球形颗粒簇,二氧化硅颗粒的长轴/短轴比为1.2至20,平均长轴/短轴比为3至15.这种胶体二氧化硅可以通过添加碱性氮化合物 向活性硅酸水溶液中加入通过四烷氧基硅烷水解生成的溶液,同时加热,然后通过使用堆积法生长颗粒。