公开(公告)号：US20080287038A1

公开(公告)日：2008-11-20

申请号：US12153111

申请日：2008-05-14

申请人： Shinsuke Miyabe ,  Kuniaki Maejima ,  Masahiro Izumi ,  Hiroaki Tanaka

发明人： Shinsuke Miyabe ,  Kuniaki Maejima ,  Masahiro Izumi ,  Hiroaki Tanaka

IPC分类号： B24B1/00 ,  C09K3/14 ,  C08J5/14

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.

摘要翻译： 本发明涉及一种用于基板的抛光组合物，其包括形成在半导体晶片上的诸如布线等的金属，其能够提供高的抛光速率而不会在布线金属上产生划痕，制造抛光组合物的方法， 和抛光方法。 用于半导体晶片的抛光组合物包括酸和包含在其表面上结合有含氨基的硅烷偶联剂的带正电荷的二氧化硅颗粒的水性介质分散体，该抛光组合物的pH为2至6。

公开(公告)号：US20090253813A1

公开(公告)日：2009-10-08

申请号：US12322296

申请日：2009-01-30

申请人： Yuko Ishiguri ,  Kunio Ohkubo ,  Yukiyo Saito ,  Masahiro Izumi ,  Masaru Nakajo ,  Kuniaki Maejima ,  Hiroaki Tanaka

发明人： Yuko Ishiguri ,  Kunio Ohkubo ,  Yukiyo Saito ,  Masahiro Izumi ,  Masaru Nakajo ,  Kuniaki Maejima ,  Hiroaki Tanaka

IPC分类号： B01F17/54 ,  B01F3/12

CPC分类号： B01F17/0007 ,  B01J13/0008 ,  C01B33/1435 ,  C01B33/146 ,  C01B33/149

摘要： A colloidal silica comprising, silica particles inside of which or on the surface of which a nitrogen containing alkaline compound is fixed, wherein said silica particles are prepared by forming and growing colloid particles using the nitrogen containing alkaline compound. Said colloidal silica can be prepared by preparing active silicic acid aqueous solution contacting silicate alkali aqueous solution with cation exchange resin, adding the nitrogen containing alkaline compound and heating, and then growing up particles by build-up method.

摘要翻译： 一种胶体二氧化硅，其包含二氧化硅颗粒，其内部或其表面上含有氮的碱性化合物被固定，其中所述二氧化硅颗粒通过使用含氮碱性化合物形成和生长胶体颗粒来制备。 所述胶体二氧化硅可以通过将阳离子交换树脂与硅酸碱水溶液接触的活性硅酸水溶液制备，加入含氮碱性化合物并加热，然后通过堆积法生长颗粒。

公开(公告)号：US20090223136A1

公开(公告)日：2009-09-10

申请号：US12230353

申请日：2008-08-28

申请人： Masaru Nakajo ,  Masahiro Izumi ,  Shinsuke Miyabe ,  Kuniaki Maejima ,  Hiroaki Tanaka

发明人： Masaru Nakajo ,  Masahiro Izumi ,  Shinsuke Miyabe ,  Kuniaki Maejima ,  Hiroaki Tanaka

IPC分类号： C09K3/14

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1463

摘要： The polishing compound for semiconductor wafer of the present invention contains colloidal silica composed of silica particles to which tetraethylammonium is fixed, and concentration of silica particles dispersed in water is between 0.5 to 50 weight %. Concentration of tetraethylammonium contained in silica particles to which tetraethylammonium is fixed is desirable to be in the range from 5×10−4 to 2.5×10−2 as indicated by molar ratio of tetraethylammonium/silica.

摘要翻译： 本发明的半导体晶片用抛光剂含有固定有四乙基铵的二氧化硅粒子，分散在水中的二氧化硅粒子浓度为0.5〜50重量％的胶体二氧化硅。 固定四乙基铵的二氧化硅颗粒中所含的四乙基铵的浓度优选为5×10-4至2.5×10-2的范围，如四乙基铵/二氧化硅的摩尔比所示。

公开(公告)号：US20080237535A1

公开(公告)日：2008-10-02

申请号：US12076316

申请日：2008-03-17

申请人： Kuniaki Maejima ,  Masaru Nakajo ,  Hiroaki Tanaka

发明人： Kuniaki Maejima ,  Masaru Nakajo ,  Hiroaki Tanaka

IPC分类号： C09K13/02 ,  C09K3/14

CPC分类号： C09G1/02 ,  H01L21/02024

摘要： A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C):(A) a specific surface area in the range of 50 to 200 m2/g measured by a BET method; (B) an average particle diameter in the range of 10 to 50 nm measured by a laser light-scattering method; and (C) an average ratio A/B of the major axis A to the minor axis B of the fumed silica particles in the range of 1.2 to 2.0 measured by TEM observation, wherein the concentration of silica particles containing the fumed silica particles is in the range of 0.5 to 50 weight percent relative to the total weight of an aqueous dispersion.

摘要翻译： 用于研磨半导体晶片的组合物含有通过使用研磨介质进行湿法研磨而制成的具有（A）〜（C）特性的热解法二氧化硅粒子：（A）比表面积为50〜200μm > 2 / g通过BET法测量; （B）通过激光散射法测定的10〜50nm范围内的平均粒径; 和（C）通过TEM观察测定的热解法二氧化硅粒子的长轴A与短轴B的平均比A / B在1.2〜2.0的范围内，其中含有热解二氧化硅粒子的二氧化硅粒子的浓度为 相对于水分散体的总重量为0.5至50重量％的范围。

公开(公告)号：US5695730A

公开(公告)日：1997-12-09

申请号：US531313

申请日：1995-09-20

申请人： Kuniaki Maejima ,  Shigeki Yamagata ,  Tomohiro Banda ,  Masaru Kishida ,  Keiji Monbetsu ,  Tsutomu Naito

发明人： Kuniaki Maejima ,  Shigeki Yamagata ,  Tomohiro Banda ,  Masaru Kishida ,  Keiji Monbetsu ,  Tsutomu Naito

IPC分类号： C01B33/143 ,  C01B33/193 ,  D21H17/67 ,  C01B33/12

CPC分类号： C01B33/193 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/16 ,  C01P2006/19 ,  Y10S516/928

摘要： The present invention provides silicic acid hydrate having a large pore volume and tiny particle diameters, and a process for preparing it. There is disclosed silicic acid hydrate obtained by neutralizing an aqueous solution of sodium silicate with a mineral acid, which has particle properties represented by an oil absorption of 250 to 350 ml/100 g, a total pore volume of 4.0 to 6.0 cc/g, an average pore radius of 200 to 400 .ANG., and an average pore diameter of 3.0 to 15 .mu.m by the laser method, or 2.0 to 4.0 .mu.m by the coulter method, or 0.5 to 3.5 .mu.m by the centrifugal precipitation method.

摘要翻译： 本发明提供了孔体积大，粒径小的硅酸水合物及其制备方法。 公开了通过用无机酸中和硅酸钠水溶液而获得的硅酸水合物，其具有由吸油量为250〜350ml / 100g，总孔体积为4.0〜6.0cc / g， 平均孔半径为200〜400安培姆，激光法的平均孔径为3.0〜15μm，通过厚刀法为2.0〜4.0μm，通过离心沉淀法为0.5〜3.5μm。

公开(公告)号：US07753974B2

公开(公告)日：2010-07-13

申请号：US12153111

申请日：2008-05-14

申请人： Shinsuke Miyabe ,  Kuniaki Maejima ,  Masahiro Izumi ,  Hiroaki Tanaka

发明人： Shinsuke Miyabe ,  Kuniaki Maejima ,  Masahiro Izumi ,  Hiroaki Tanaka

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09C1/02 ,  C09K3/14 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.

摘要翻译： 本发明涉及一种用于基板的抛光组合物，其包括形成在半导体晶片上的诸如布线等的金属，其能够提供高的抛光速率而不会在布线金属上产生划痕，制造抛光组合物的方法， 和抛光方法。 用于半导体晶片的抛光组合物包括酸和包含在其表面上结合有含氨基的硅烷偶联剂的带正电荷的二氧化硅颗粒的水性介质分散体，该抛光组合物的pH为2至6。

公开(公告)号：US20100163786A1

公开(公告)日：2010-07-01

申请号：US12653683

申请日：2009-12-17

申请人： Masahiro Izumi ,  Masaru Nakajo ,  Yukiyo Saito ,  Kuniaki Maejima ,  Hiroaki Tanaka

发明人： Masahiro Izumi ,  Masaru Nakajo ,  Yukiyo Saito ,  Kuniaki Maejima ,  Hiroaki Tanaka

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/02024

摘要： A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide.

摘要翻译： 一种用于半导体晶片抛光的抛光组合物，其包括由通过从碱金属硅酸盐除去碱而获得的活性硅酸水溶液制备的胶体二氧化硅和至少一种选自乙二胺，二乙二胺，咪唑，甲基咪唑，哌啶 ，吗啉，精氨酸和肼，其中胶体二氧化硅的pH在25℃下为8.5〜11.0，含有氢氧化季铵。

公开(公告)号：US20080311750A1

公开(公告)日：2008-12-18

申请号：US12081829

申请日：2008-04-22

申请人： Masahiro Izumi ,  Shinsuke Miyabe ,  Kuniaki Maejima ,  Hiroaki Tanaka

发明人： Masahiro Izumi ,  Shinsuke Miyabe ,  Kuniaki Maejima ,  Hiroaki Tanaka

IPC分类号： H01L21/304 ,  B24B1/00 ,  C09K3/14

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463

摘要： The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.

摘要翻译： 本发明涉及抛光性优异的半导体晶片用研磨用组合物及研磨方法。 用于半导体晶片的抛光组合物包括由长轴与短轴的比率为1.5至15的非球形二氧化硅颗粒组成的胶体二氧化硅。半导体晶片的抛光方法使用抛光组合物。 抛光组合物与使用球形胶体二氧化硅的抛光组合物相比可以提供非常高的抛光速率，并且可以提供良好的镜面抛光而不会产生划痕。 此外，小的碱金属含量可以减少半导体晶片的不利影响，例如抛光后的残留磨料。

公开(公告)号：US20090267021A1

公开(公告)日：2009-10-29

申请号：US12384905

申请日：2009-04-10

申请人： Masaru Nakajo ,  Yukiyo Saito ,  Kunio Ohkubo ,  Kuniaki Maejima ,  Hiroaki Tanaka

发明人： Masaru Nakajo ,  Yukiyo Saito ,  Kunio Ohkubo ,  Kuniaki Maejima ,  Hiroaki Tanaka

IPC分类号： C09K13/00

CPC分类号： C09K3/1463

摘要： Colloidal silica forming nonspherical particles cluster, whose long axis/short axis ratio of silica particles is of 1.2 to 20, and average long axis/short axis ratio of 3 to 15. This colloidal silica can be produced by forming particles by adding basic nitrogen compounds to an active silicic acid aqueous solution, the solution which produced by hydrolysis of tetraalkoxysilane, while heating, then growing particles by using a build up method.

摘要翻译： 胶体二氧化硅形成非球形颗粒簇，二氧化硅颗粒的长轴/短轴比为1.2至20，平均长轴/短轴比为3至15.这种胶体二氧化硅可以通过添加碱性氮化合物 向活性硅酸水溶液中加入通过四烷氧基硅烷水解生成的溶液，同时加热，然后通过使用堆积法生长颗粒。

公开(公告)号：US20080038996A1

公开(公告)日：2008-02-14

申请号：US11837734

申请日：2007-08-13

申请人： Kuniaki MAEJIMA ,  Shinsuke MIYABE ,  Masahiro IZUMI ,  Hiroaki TANAKA ,  Makiko KURODA

发明人： Kuniaki MAEJIMA ,  Shinsuke MIYABE ,  Masahiro IZUMI ,  Hiroaki TANAKA ,  Makiko KURODA

IPC分类号： B24B7/00 ,  C09K3/14

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/30625

摘要： A polishing composition for semiconductor wafers containing colloidal silica is disclosed, wherein the colloidal silica is prepared from an active silicic acid aqueous solution obtained by removing alkali from an alkali silicate aqueous solution and a quaternary ammonium base, and is stabilized with a quaternary ammonium base. The polishing composition contains no alkali metals. The polishing composition contains a buffer solution that is a combination of a weak acid having a pKa from 8.0 to 12.5 at 25° C. (pKa is a logarithm of the reciprocal of acid dissociation constant) and a quaternary ammonium base, and exhibits a buffer action in the range from pH8 to pH11.

摘要翻译： 公开了一种含有胶体二氧化硅的半导体晶片用研磨用组合物，其中，由碱性硅酸盐水溶液和季铵碱除去碱而得到的活性硅酸水溶液制成胶体二氧化硅，并用季铵碱稳定化。 抛光组合物不含碱金属。 抛光组合物含有缓冲溶液，该缓冲溶液是25℃下pKa为8.0〜12.5的弱酸（pKa为酸解离常数的倒数的对数）和季铵碱的组合，并呈现缓冲液 在pH8至pH11范围内的作用。