公开(公告)号：US20080079013A1

公开(公告)日：2008-04-03

申请号：US11535992

申请日：2006-09-28

申请人： Yun-Li Li ,  Tzu-Chi Wen ,  Liang-Wen Wu ,  Chi-Jui Chen ,  Fen-Ren Chien

发明人： Yun-Li Li ,  Tzu-Chi Wen ,  Liang-Wen Wu ,  Chi-Jui Chen ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/08

摘要： A light emitting diode structure including a substrate, a first type doped semiconductor layer, an insulating layer, light emitting layers, a second type doped semiconductor layer, a first pad and a second pad is provided. The first type doped semiconductor layer is disposed on the substrate. The insulating layer having openings is disposed on the first type doped semiconductor layer for exposing a part of the first type doped semiconductor layer. The light emitting layers are disposed within the corresponding openings of the insulating layer respectively. The second type doped semiconductor layer is disposed on the insulating layer and the light emitting layers. The first pad is disposed on the first type doped semiconductor layer and is electrically connected thereto. The second pad is disposed on the second type doped semiconductor layer and is electrically connected thereto. Besides, air gaps may also be utilized for separating the light emitting layers.

摘要翻译： 提供了包括衬底，第一类型掺杂半导体层，绝缘层，发光层，第二类型掺杂半导体层，第一衬垫和第二衬垫的发光二极管结构。 第一类掺杂半导体层设置在基板上。 具有开口的绝缘层设置在第一类掺杂半导体层上，用于暴露第一类掺杂半导体层的一部分。 发光层分别设置在绝缘层的相应开口内。 第二类掺杂半导体层设置在绝缘层和发光层上。 第一焊盘设置在第一型掺杂半导体层上并与其电连接。 第二焊盘设置在第二型掺杂半导体层上并与其电连接。 此外，气隙也可以用于分离发光层。

公开(公告)号：US06784081B1

公开(公告)日：2004-08-31

申请号：US10604628

申请日：2003-08-06

申请人： Chin-Tsai Hsu ,  Chi-Jui Chen ,  Pang-Miao Liu

发明人： Chin-Tsai Hsu ,  Chi-Jui Chen ,  Pang-Miao Liu

IPC分类号： H01L2128

CPC分类号： H01L29/42316 ,  H01L21/28 ,  Y10S438/951

摘要： A method of forming a gate structure includes forming sequentially a pad layer and a first photoresist layer over a substrate. A cross-linked surface layer is formed on the surface of the first photoresist layer, followed by rounding the profile of the first photoresist layer, and removing the exposed pad layer to expose the substrate. A second photoresist layer is formed over the first photoresist layer, wherein a portion of the first photoresist layer and the exposed substrate are exposed by the second photoresist layer. Thereafter, a conductive layer is formed, wherein the conductive layer formed on the second photoresist layer is separated from the conductive layer formed on the first photoresist layer and the exposed substrate. The first and the second photoresist layers are removed while the conductive layer on the second photoresist layer is concurrently being striped. The remaining conductive layer serves as a gate structure.

摘要翻译： 形成栅极结构的方法包括在衬底上依次形成焊盘层和第一光致抗蚀剂层。 在第一光致抗蚀剂层的表面上形成交联表面层，随后对第一光致抗蚀剂层的轮廓进行四舍五入，并且去除暴露的焊盘层以露出衬底。 在第一光致抗蚀剂层上形成第二光致抗蚀剂层，其中第一光致抗蚀剂层的一部分和暴露的基板被第二光刻胶层曝光。 此后，形成导电层，其中形成在第二光致抗蚀剂层上的导电层与形成在第一光致抗蚀剂层和暴露的基底上的导电层分离。 第一和第二光致抗蚀剂层被去除，而第二光致抗蚀剂层上的导电层同时被条纹化。 剩余的导电层用作栅极结构。